US2009085196A1PendingUtilityA1

Integrated circuit chip manufaturing method and semiconductor device

Assignee: CANON KKPriority: Jun 22, 2004Filed: Dec 4, 2008Published: Apr 2, 2009
Est. expiryJun 22, 2024(expired)· nominal 20-yr term from priority
H10P 72/7422H10P 72/7416H10P 72/7412H10P 72/7402H10P 72/74H10P 54/00H10W 10/181H10P 90/1922Y10S438/977
52
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Claims

Abstract

This invention moderates the difficulty in chip formation or packaging which accompanies thinning of a semiconductor region where an integrated circuit is formed. An integrated circuit chip manufacturing method includes a first bonding step of bonding a first support member to a first surface of a semiconductor substrate which has the first surface and a second surface and has a semiconductor region including an integrated circuit on a first surface side thereof, a thinning step of removing a second surface-side portion of the semiconductor substrate bonded to the first support member to leave the semiconductor region, thereby thinning the semiconductor substrate, a second bonding step of bonding a second support member to the second surface side of the thinned semiconductor substrate, and a chip forming step of forming chips by cutting the semiconductor region.

Claims

exact text as granted — not AI-modified
1 - 19 . (canceled) 
     
     
         20 . A semiconductor device which is formed by packaging
 an integrated circuit chip and   a support member bonded to one surface of said integrated circuit chip,   wherein said integrated circuit chip and support member have substantially the same size.   
     
     
         21 . The device according to  claim 20 , wherein said support member comprises a member having a higher thermal conductivity than that of a substrate of said integrated circuit chip. 
     
     
         22 . The device according to  claim 20 , wherein said support member comprises a light transmitting member. 
     
     
         23 . The device according to  claim 20 , wherein said integrated circuit chip and support member are obtained by cutting both a semiconductor substrate having a plurality of integrated circuit chips and a support member bonded to said semiconductor substrate.

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