Solid-state imaging device and method for fabricating same

Abstract

A solid-state imaging device includes a plurality of pixels two-dimensionally arrayed in a well region disposed on a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge; an element isolation layer which is disposed on the surface of the well region along the peripheries of the individual charge accumulation regions and which electrically isolates the individual pixels from each other; and a diffusion layer which is disposed beneath the element isolation layer and which electrically isolates the individual pixels from each other, the diffusion layer having a smaller width than that of the element isolation layer. Each charge accumulation region is disposed so as to extend below the element isolation layer and be in contact with or in close proximity to the diffusion layer.

1 - 6 . (canceled) 
   
   
       7 . A solid-state imaging device comprising:
 a plurality of pixels having portions formed in a well region of a semiconductor substrate, each pixel including a photoelectric conversion section having a charge accumulation region which accumulates signal charge;   an element isolation layer which is disposed over a surface of the well region around individual charge accumulation regions and which improves isolation between adjacent ones of the individual pixels; and
 a diffusion region which is disposed beneath the element isolation layer so as to surround the individual charge accumulation regions and which improves isolation between the individual pixels, the diffusion region having a smaller width than that of the element isolation layer, the diffusion region being patterned to have a width less than 10 μm. 
   
   
   
       8 . The solid-state imaging device according to  claim 7 , wherein the photoelectric conversion section includes a hole accumulation layer disposed above the charge accumulation region. 
   
   
       9 . The solid-state imaging device according to  claim 7 , wherein the charge accumulation region is comprised of ions implanted into the substrate. 
   
   
       10 . The solid-state imaging device according to  claim 7 , wherein the charge accumulation region is comprised of ions implanted into the substrate and an impurity that is different from the impurity used in forming the charge accumulation region is implanted at an extension region between the charge accumulation region and the diffusion region.