Solid-state imaging device

Abstract

In a solid-state imaging device of the present invention, light-sensitive elements 54 , each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate 51 . A plurality of detecting electrodes 53 are provided on the semiconductor substrate 51 corresponding to the light-sensitive elements 54 for detecting an electrical charge generated by each light-sensitive element 54 . A plurality of interconnections 57 coat the detecting electrodes 53 , and apply a voltage thereto. A plurality of reflecting walls 62 are formed in a grid pattern over the interconnection 57 so as to partition the light-sensitive elements 54 individually for reflecting a portion of light entering the semiconductor substrate 51 from above onto the light receiving section of each light-sensitive element 54 . The plurality of reflecting walls 62 are electrically insulated from the interconnections 57.

1 - 13 . (canceled) 
   
   
       14 . A solid-state imaging device comprising:
 a plurality of pixels, each of the pixels including a photodiode provided on a semiconductor substrate;   a light receiving region in which the pixels are arranged in a matrix form;   a plurality of electrodes for outputting electric charges generated in the photodiodes of the respective pixels;   a wiring for applying voltage to the electrodes;   an insulating film provided above the photodiode; and   a plurality of reflecting walls which are formed so as to reflect a part of incident light entering the semiconductor substrate to the respective photodiodes and have a cross section whose width narrows as the distance to the semiconductor substrate in a direction perpendicular to the semiconductor substrate decreases,   wherein the reflecting walls are electrically insulated from the wiring.   
   
   
       15 . The solid-state imaging device according to  claim 14 , further comprising:
 a plurality of intralayer lenses; and   a plurality of microlenses provided above the reflecting walls and the intralayer lenses so as to correspond to the respective photodiodes.   
   
   
       16 . The solid-state imaging device according to  claim 15 ,
 wherein the center of the microlens in a peripheral pixel in the light receiving region is displaced by a predetermined displacement amount from the center of an aperture in the same peripheral pixel toward the center of the light receiving region, and   wherein the predetermined displacement amount increases as the distance from the center of the light receiving region to the peripheral pixel increases.   
   
   
       17 . The solid-state imaging device according to  claim 14 , further comprising a color filter provided above the reflecting walls. 
   
   
       18 . The solid-state imaging device according to  claim 15 , further comprising a color filter provided between the reflecting walls and the microlenses.