Microscale patterning and articles formed thereby

Abstract

The present invention is directed to a lithographic method and apparatus for creating micrometer sub-micrometer patterns in a thin film coated on a substrate. The invention utilizes the self-formation of periodic, supramolecular pillar arrays ( 49 ) in a melt to form the patterns. The self-formation is induced by placing a plate or mask ( 35 ) a distance above the polymer films ( 33 ). The pillars bridge the plate and the mask, having a height equal to the plate-mask separation and preferably 2-7 times that of the film's initial thickness. If the surface of the mask has a protruding pattern, the pillar array is formed with the edge of the pillar array aligned to the boundary of the mask pattern.

1 . A method of forming a structure comprising:
 providing a first substrate having a first array thereon;   providing a second substrate having a second array thereon;   depositing a film on the first substrate;   placing the second substrate at a pre-determined distance from the first substrate; and   cycling temperatures thereby forming the structure having a plurality of pillars between the first substrate and the second substrate.   
     
     
         2 . The method of  claim 1 , further comprising the step of maintaining the pre-determined distance between the first substrate and the second substrate during cycling. 
     
     
         3 . The method of  claim 1 , wherein film comprises a material selected from semiconductors, dielectrics, metals, polymers, monomers and combinations thereof. 
     
     
         4 . The method of  claim 1 , wherein the step of cycling the temperature comprises heating at least the film to at least the glass transition temperature of the film. 
     
     
         5 . The method of  claim 4 , wherein the step of heating is carried out by method selected from laser heating, light heating, microwave induction, heat radiation, contact heating or combinations thereof 
     
     
         6 . The method of  claim 4 , wherein heating is selected from pulsed heating, continuous heating or combinations thereof. 
     
     
         7 . The method of  claim 1 , wherein the step of cycling the temperature comprises heating the film to a temperature where the film becomes flowable. 
     
     
         8 . The method of claim I, wherein the step of cycling the temperature further comprises cooling at least the film. 
     
     
         9 . The method of  claim 1 , wherein the first substrate and the second substrate independently comprise a material selected from semiconductors, dielectrics, metals, polymers, monomers and combinations thereof. 
     
     
         10 . The method of  claim 1 , wherein the pre-determined distance is less than about 1 micron. 
     
     
         11 . The method of  claim 1 , wherein the pre-determined distance is from about 100 to about 400 nm. 
     
     
         12 . The method of  claim 1 , wherein the first substrate comprises a word line assembly. 
     
     
         13 . The method of  claim 1 , wherein the second substrate comprises a bit-line assembly. 
     
     
         14 . The method of  claim 1 , wherein the plurality of pillars forms junctions between the first array and the second array. 
     
     
         15 . A method of forming a pillar array comprising:
 providing a first substrate having a first array thereon;   providing a second substrate having a second array thereon;   depositing a film on the first substrate;   placing the second substrate at a pre-determined distance from the first substrate; and   cycling temperatures to form the pillar array between the first substrate and the second substrate   
     
     
         16 . The method of  claim 15 , further comprising the step of maintaining the pre-determined distance between the first substrate and the second substrate during cycling. 
     
     
         17 . The method of  claim 15 , wherein film comprises a material selected from semiconductors, dielectrics, metals, polymers, monomers and combinations thereof. 
     
     
         18 . The method of  claim 15 , wherein the step of cycling the temperature comprises heating at least the film to at least the glass transition temperature of the film. 
     
     
         19 . The method of  claim 18 , wherein the step of heating is carried out by method selected from laser heating, light heating, microwave induction, heat radiation, contact heating or combinations thereof 
     
     
         20 . The method of  claim 18 , wherein heating is selected from pulsed heating, continuous heating or combinations thereof 
     
     
         21 . The method of  claim 15 , wherein the step cycling the temperature comprises heating the film to a temperature where the film becomes flowable. 
     
     
         22 . The method of  claim 15 , wherein the step of cycling the temperature comprises cooling at least the film. 
     
     
         23 . The method of  claim 15 , wherein the first substrate and the second substrate independently comprise a material selected from semiconductors, dielectrics, metals, polymers, monomers and combinations thereof 
     
     
         24 . The method of  claim 15 , wherein the pre-determined distance is less than about 1 micron. 
     
     
         25 . The method of  claim 15 , wherein the pre-determined distance is from about 100 to about 400 nm. 
     
     
         26 . The method of  claim 15 , wherein the first substrate comprises a word line assembly. 
     
     
         27 . The method of  claim 15 , wherein the second substrate comprises a bit-line assembly. 
     
     
         28 . The method of  claim 15 , wherein the pillar array forms junctions between the first array and the second array.