Semiconductor Device with Multi-Layer Metallization

Abstract

One or more embodiments are related to a semiconductor device, comprising: a metallization layer comprising a plurality of portions, each of the portions having a different thickness. The metallization layer may be a final metal layer.

1 . A semiconductor device, comprising:
 a metallization layer comprising at least a first metal line and a second metal line spacedly disposed from said first metal line, said first metal line having a first thickness, said second metal line having a second thickness greater than said first thickness.   
   
   
       2 . The device of  claim 1 , wherein said metallization layer is a final metal layer. 
   
   
       3 . The device of  claim 1 , wherein said first metal line is electrically insulated from said second metal line. 
   
   
       4 . The device of  claim 1 , wherein said final metal layer comprises a pure metal or an alloy. 
   
   
       5 . The device of  claim 1 , wherein said final metal layer comprises the element copper. 
   
   
       6 . The device of  claim 1 , wherein said first metal line comprises a first metal layer, said second metal line comprising a second metal layer at least partially overlying said first metal layer. 
   
   
       7 . A semiconductor device, comprising:
 a metallization layer comprising a plurality of portions, each of said portions having a different thickness.   
   
   
       8 . The device of  claim 7 , wherein said metallization layer is a final metal layer. 
   
   
       9 . The device of  claim 7 , wherein each of said portions are spacedly disposed from each other. 
   
   
       10 . The device of  claim 7 , wherein said portions are all part of single metal line. 
   
   
       11 . The device of  claim 7 , wherein said metallization layer comprises the element copper. 
   
   
       12 . A semiconductor structure, comprising:
 a metallization layer comprising at least one metal line, said metal line comprising a plurality of portions, each of said portions having a different thickness.   
   
   
       13 . The structure of  claim 12 , wherein said metallization layer is a final metal layer and said metal line is a final metal line. 
   
   
       14 . The device of  claim 12 , wherein said metal line comprises the element copper. 
   
   
       15 . The device of  claim 12 , wherein said metal line comprises pure copper or a copper alloy. 
   
   
       16 . A method for forming a final metal layer of semiconductor device, comprising:
 providing a surface;   forming a first metal layer over a portion of said surface; and   forming a second metal layer over at least a portion of said first metal layer and/or over a portion of said surface that is not occupied by said first metal layer.   
   
   
       17 . The method of  claim 16 , wherein said second metal layer is formed over at least a portion of said first metal layer. 
   
   
       18 . The method of  claim 16 , wherein said second metal layer is formed over at least a portion of said surface not occupied by said first metal layer. 
   
   
       19 . The method of  claim 16 , wherein said surface is the surface of a metal seed layer. 
   
   
       20 . The method of  claim 16 , wherein said first metal layer is formed by an electroplating process. 
   
   
       21 . The method of  claim 16 , wherein said second metal layer is formed by an electroplating process. 
   
   
       22 . The method of  claim 16 , wherein said first metal layer comprises the element copper and said second metal layer comprises the element copper. 
   
   
       23 . A method for forming a semiconductor device, comprising:
 providing a metal seed layer;   first electroplating a first metal layer over said metal seen layer; and   second electroplating a second metal layer over said first metal layer.   
   
   
       24 . The method of  claim 23 , wherein said metal seed layer, said first metal layer and said second metal layer comprise the element copper. 
   
   
       25 . The method of  claim 23 , wherein said metal seed layer, said first metal layer and said second metal layer comprise pure copper or a copper alloy.