Nanoparticle production and corresponding structures

Abstract

Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.

1 . A collection of particles comprising doped elemental silicon/germanium having an average primary particle size of no more than about 100 nm. 
     
     
         2 . The collection of particles of  claim 1  wherein the average primary particles size is no more than about 75 nm. 
     
     
         3 . The collection of particles of  claim 1  wherein the particles comprise effectively no particles with a primary particle diameter greater than about 4 times the average particle diameter. 
     
     
         4 . The collection of particles of  claim 1  wherein at least about 95 percent of the particles have a primary particle diameter greater than about 60 percent of the average primary particle diameter and less than about 140 percent of the average primary particle diameter. 
     
     
         5 . The collection of particles of  claim 1  wherein the elemental silicon/germanium is crystalline. 
     
     
         6 . The collection of particles of  claim 1  wherein the dopant concentration is no more than 10 mole percent. 
     
     
         7 . The collection of particles of  claim 1  wherein the dopant concentration is from about 0.001 to about 5 mole percent. 
     
     
         8 . The collection of particles of  claim 1  wherein the dopant is B, Al, Ga, In, or combinations thereof. 
     
     
         9 . The collection of particle of  claim 1  wherein the dopant is P, Sb or combinations thereof. 
     
     
         10 . A method for producing doped elemental silicon/germanium particles having an average primary particle size of no more than about 100 nm, the method comprising reacting a reactant flow comprising a silicon precursor and a dopant precursor wherein the reactant flow passes through a light beam to form a product flow downstream from the light beam and wherein the light beam drives the reaction of the precursor compositions. 
     
     
         11 . The method of  claim 10  wherein the light beam is generated by a laser. 
     
     
         12 . The method of  claim 11  wherein the laser is an infrared laser. 
     
     
         13 . The method of  claim 10  wherein the reactant flow is initiated in a reaction chamber from a inlet of a nozzle wherein the inlet has an elongated shape the generated as elongated flow aligned to pass the elongated flow through the light beam. 
     
     
         14 . The method of  claim 13  wherein the reactant inlet nozzle comprises an inlet opening that is elongated with an aspect ratio of at least about 5. 
     
     
         15 . The method of  claim 10  wherein the dopant comprises B, Al, Ga, In, or combinations thereof. 
     
     
         16 . The method of  claim 10  wherein the dopant comprises P, Sb or combinations thereof. 
     
     
         17 . The method of  claim 10  wherein the product particles have a dopant concentration from about 0.001 to about 5 mole percent. 
     
     
         18 . The method of  claim 10  wherein the precursor comprises a vapor precursor and an aerosol precursor. 
     
     
         19 . The method of  claim 10  wherein the silicon/germanium precursor and the dopant precursors are delivered into a reaction chamber as vapors.