US2009065953A1PendingUtilityA1

Chip module and a fabrication method thereof

Assignee: ADVANCED SEMICONDUCTOR ENGPriority: Sep 11, 2007Filed: Sep 5, 2008Published: Mar 12, 2009
Est. expirySep 11, 2027(~1.1 yrs left)· nominal 20-yr term from priority
Inventors:Jian-Cheng Chen
H10W 90/754H10W 90/734H10W 74/00H10W 72/5445H10W 72/884H10W 76/47
52
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Claims

Abstract

A chip module and a fabricating method thereof are provided. Firstly, a substrate is provided. Next, a chip is assembled on the substrate and electrically connected with the substrate. Afterward, a plurality of passive units is assembled on the substrate in the style of encircling the chip. Then, a first glue structure is filled between the passive units so that an encircled area is defined by the first glue structure and the passive units. Then, a second glue structure is filled in the encircled area so that the chip is covered by the second glue structure.

Claims

exact text as granted — not AI-modified
1 . A chip module, comprising:
 a substrate;   a chip assembled on the substrate and electrically connected with the substrate;   a plurality of passive units assembled on the substrate in the style of encircling the chip   a first glue structure filled between the passive units so that an encircled area is defined by the first glue structure and the passive units; and   a second glue structure filled within the encircled area so that the chip is covered by the second glue structure.   
     
     
         2 . The chip module according to  claim 1 , wherein an adhesive layer disposed between the chip and the substrate. 
     
     
         3 . The chip module according to  claim 1 , further comprising a plurality of wires is electrically connected with the chip and the substrate. 
     
     
         4 . The chip module according to  claim 3 , wherein the wires are buried in the second glue structure. 
     
     
         5 . The chip module according to  claim 1 , wherein the chip is a power amplifier chip. 
     
     
         6 . The chip module according to  claim 1 , wherein the passive units are buried in the first glue structure. 
     
     
         7 . The chip module according to  claim 1 , wherein the constituent of the first glue structure is different from that of the second glue structure. 
     
     
         8 . The chip module according to  claim 1 , wherein viscosity of the first glue structure is higher than viscosity of the second glue structure. 
     
     
         9 . A fabricating method of chip module, the method comprising:
 providing a substrate;   assembling a chip on the substrate and electrically connecting the chip with the substrate;   assembling a plurality of passive units on the substrate in the style of encircling the chip;   filling a first glue structure between the passive units so that an encircled area is defined by the first glue structure and the passive units; and   filling the encircled area with a second glue structure so that the chip is covered by the second glue structure.   
     
     
         10 . The fabricating method according to  claim 9 , wherein the passive units are assembled on the substrate by surface mount technology (SMT). 
     
     
         11 . The fabricating method according to  claim 9 , wherein before the step of assembling the chip on the substrate, the method further comprises:
 disposing an adhesive layer on the substrate, the chip is adhered to the substrate via the adhesive layer.   
     
     
         12 . The fabricating method according to  claim 9 , further comprises:
 disposing a plurality of wires so that the wires electrically connect the chip with the substrate.   
     
     
         13 . The fabricating method according to  claim 12 , wherein the wires are buried in the second glue structure. 
     
     
         14 . The fabricating method according to  claim 9 , wherein the chip is a power amplifier chip. 
     
     
         15 . The fabricating method according to  claim 9 , wherein during the step of filling the first glue structure between the passive units, the passive units are buried in the first glue structure. 
     
     
         16 . The fabricating method according to  claim 9 , wherein the constituent of the first glue structure is different from that of the second glue structure. 
     
     
         17 . The fabricating method according to  claim 16 , wherein viscosity of the first glue structure is higher than viscosity of the second glue structure.

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