Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device includes a base plate made of a material including at least a thermosetting resin, and having an opening, a vertical conductor filled and provided in the opening of the base plate, at least one semiconductor construct having a semiconductor substrate and a plurality of external connection electrodes provided on one side of the semiconductor substrate, and an insulating layer secured to and provided on a periphery of the semiconductor construct. The insulating layer is secured to the base plate, and the external connection electrodes of the semiconductor construct are bonded to the vertical conductor.

1 . A semiconductor device comprising:
 a base plate made of a material including at least a thermosetting resin, and having an opening;   a vertical conductor filled and provided in the opening of the base plate;   at least one semiconductor construct having a semiconductor substrate and a plurality of external connection electrodes provided on one side of the semiconductor substrate; and   an insulating layer secured to and provided on a periphery of the semiconductor construct,   wherein the insulating layer is secured to the base plate, and the external connection electrodes of the semiconductor construct are bonded to the vertical conductor.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein each of the external connection electrodes of the semiconductor construct is columnar. 
     
     
         3 . The semiconductor device according to  claim 2 , wherein the semiconductor construct has a sealing film formed between the external connection electrodes of the semiconductor substrate, and the sealing film is secured to the base plate. 
     
     
         4 . The semiconductor device according to  claim 3 , wherein each of the external connection electrodes has one surface exposed from the sealing film, and the sealing film has one surface which forms the same plane with the one surface of each of the external connection electrodes. 
     
     
         5 . The semiconductor device according to  claim 2 , wherein the semiconductor construct has a tip of the external connection electrode cutting into the vertical conductor. 
     
     
         6 . The semiconductor device according to  claim 5 , wherein the base plate is secured to the insulating layer. 
     
     
         7 . The semiconductor device according to  claim 6 , wherein the base plate has a second opening in an area which is not opposite to the external connection electrode, and a second vertical conductor is filled in the second opening. 
     
     
         8 . The semiconductor device according to  claim 1 , wherein the base plate has a second opening in an area which is not opposite to the external connection electrode, and a second vertical conductor is filled in the second opening. 
     
     
         9 . The semiconductor device according to  claim 8 , wherein the second vertical conductor protrudes from the other surface of the base plate. 
     
     
         10 . The semiconductor device according to  claim 8 , wherein the insulating layer has a third opening in an area opposite to the second vertical conductor, and a third vertical conductor electrically connected to the second vertical conductor is filled in the third opening. 
     
     
         11 . The semiconductor device according to  claim 10 , wherein an other-surface-side wiring line is provided on the other surface of the insulating layer. 
     
     
         12 . The semiconductor device according to  claim 1 , wherein the vertical conductor includes a cured conductive paste. 
     
     
         13 . The semiconductor device according to  claim 1 , wherein a wiring line having at least one layer connected to the vertical conductor is provided on one surface of the base plate. 
     
     
         14 . The semiconductor device according to  claim 13 , further comprising a solder ball electrically connected to the wiring. 
     
     
         15 . The semiconductor device according to  claim 1 , wherein a rear-surface-side wiring line is provided on a surface of the insulating layer opposite to a surface secured to the base plate. 
     
     
         16 . The semiconductor device according to  claim 15 , further comprising another semiconductor construct electrically connected to the rear-surface-side wiring line. 
     
     
         17 . The semiconductor device according to  claim 15 , further comprising: a rear-surface-side insulating layer having a rear-surface-side opening, on the surface of the insulating layer opposite to the surface secured to the base plate and on the rear-surface-side wiring line; and a rear-surface-side vertical conductor filled in the rear-surface-side opening. 
     
     
         18 . The semiconductor device according to  claim 17 , further comprising an electronic component electrically connected to the rear-surface-side vertical conductor. 
     
     
         19 . A semiconductor device comprising:
 a base plate provided with a plurality of first vertical conductors which penetrate in a thickness direction therethrough and protruding from one surface of the base plate;   a semiconductor construct having a plurality of wiring lines electrically connected to a semiconductor substrate and the vertical conductors; and   an insulating layer covering a periphery of the semiconductor construct and closely contacting the base plate.   
     
     
         20 . The semiconductor device according to  claim 19 , wherein the base plate is further provided with a second vertical conductor which penetrates the base plate in a thickness direction thereof and protrudes from one surface thereof and electrically isolated from the first vertical conductors, the second vertical conductor being provided in an area of the base plate opposite to the insulating layer.