US2009065145A1PendingUtilityA1

Plasma Processing Apparatus And Method Capable Of Adjusting Temperature Within Sample Table

Assignee: ARAMAKI TOORUPriority: Jun 17, 2005Filed: Nov 10, 2008Published: Mar 12, 2009
Est. expiryJun 17, 2025(expired)· nominal 20-yr term from priority
H10P 72/0602H10P 72/0434H10P 72/0421H01J 37/32091H01J 37/32192H01J 2237/2001H01J 37/32935
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Claims

Abstract

A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.

Claims

exact text as granted — not AI-modified
1 - 6 . (canceled) 
   
   
       7 . A plasma processing apparatus, comprising:
 a processing chamber which is disposed within a vacuum vessel, a plasma being generated within the processing chamber;   a sample table which is disposed within the processing chamber at a lower portion thereof, a workpiece to be processed being disposed on an upper surface of the sample table;   an electrode which is disposed inside of the sample table, the electrode being applied with a first high frequency power for adjusting a surface potential of the workpiece during processing of the workpiece;   a passage which is disposed inside of the sample table, the passage enabling flow of a heat exchange medium therein;   a temperature adjuster which adjusts a temperature of the heat exchange medium flowing in the passage; and   a control device which controls an operation of the temperature adjuster;   wherein the control device includes a calculating unit which calculates, before the first high frequency power is applied to the electrode, a setup value of temperature of the heat exchange medium for the temperature adjuster and a startup time at which the temperature adjuster starts adjustment of temperature of the heat exchange medium, the startup time being set so that a temperature of the sample table starts changing in response to the adjustment by the temperature adjuster substantially at a timing when the first high frequency power is applied to the electrode; and   wherein the control device sends, to the temperature adjuster, a command for operating the temperature adjuster based on a calculation result so as to maintain a temperature of the sample table constant during the processing of the workpiece.   
   
   
       8 . A plasma processing apparatus according to  claim 7 , wherein the calculator calculates the setup value of the temperature of the heat exchange medium by the temperature adjuster before the first high frequency power is applied to the electrode. 
   
   
       9 . A plasma processing apparatus according to  claim 7 , wherein the calculator calculates a setup value of a flow rate of the heat exchange medium by the temperature adjuster before the first high frequency power is applied to the electrode. 
   
   
       10 . A plasma processing apparatus according to  claim 7 , further comprising a ring-shaped conductive member mounted above the sample table by way of an electrically insulating member provided between the ring-shaped conductive member and the electrode. 
   
   
       11 . A plasma processing apparatus according to  claim 7 , further comprising: a ring-shaped conductive member disposed above the sample table along an outer circumferential side of a surface of the sample table on which the workpiece is mounted, the ring-shaped conductive member being applied with a second high frequency power, wherein the workpiece is processed by the plasma while adjusting each of the first and second high frequency power applied to the electrode and the ring-shaped conductive member, respectively. 
   
   
       12 . A plasma processing apparatus according to  claim 11 , wherein the ring-shaped conductive member is mounted above the sample table by way of an electrically insulating member provided between the ring-shaped conductive member and the electrode.

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