Apparatus and method for removing photoresist from a substrate

Abstract

An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the photoresist, and subsequently removing the chemically altered photoresist with a third reactant. In one example, the first reactant is supercritical carbon dioxide (SCCO 2 ), the second reactant is ozone vapor, and the third reactant is deionized water.

1 .- 30 . (canceled) 
   
   
       31 . An apparatus for removing photoresist from a substrate, comprising:
 at least one chamber for treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, for treating the photoresist with a second reactant to chemically alter the photoresist, for rinsing the substrate, for drying the substrate and for holding the substrate; and   transfer means for transferring the substrate between chambers.   
   
   
       32 . The apparatus of  claim 31 , said apparatus including a single chamber for treating the photoresist with the first reactant to cause swelling, cracking or delamination of the photoresist, and for treating the photoresist with the second reactant to chemically alter the photoresist. 
   
   
       33 . The apparatus of  claim 31 , said apparatus including a separate chamber for treating the photoresist with the first reactant to cause swelling, cracking or delamination of the photoresist, and for treating the photoresist with the second reactant to chemically alter the photoresist. 
   
   
       34 . The apparatus of  claim 31 , said apparatus including a separate chamber for each operation. 
   
   
       35 . The apparatus of  claim 31 , said transfer means including a robotic arm. 
   
   
       36 . The apparatus of  claim 31 , wherein the photoresist is formed by ion implantation. 
   
   
       37 . The apparatus of  claim 36 , wherein the ion implantation was performed at a dose of 3×10 15  ions/cm 2  or higher. 
   
   
       38 . The apparatus of  claim 31 , wherein the first reactant is supercritical carbon dioxide (SCCO 2 ). 
   
   
       39 . The apparatus of  claim 38 , wherein the supercritical carbon dioxide (SCCO 2 ) is at a temperature of 100-150° C. and a pressure of 150-200 bar. 
   
   
       40 . The apparatus of  claim 31 , wherein the second reactant is an ozone-based reactant. 
   
   
       41 . The apparatus of  claim 40 , wherein the ozone-based reactant is ozone vapor. 
   
   
       42 . The apparatus of  claim 41 , wherein the ozone vapor is at a temperature of 105-115° C. and a pressure of 60-80 kPa. 
   
   
       43 . The apparatus of  claim 41 , wherein the concentration of the ozone in an ozone generator is 90,000 ppm or greater. 
   
   
       44 . The apparatus of  claim 31 , wherein the rinse is a deionized water rinse. 
   
   
       45 . The apparatus of  claim 31 , wherein the first reactant is supercritical carbon dioxide (SCCO 2 ) and the second reactant is ozone, said single chamber including a heater jacket, a carbon dioxide (CO 2 ) source, a supercritical carbon dioxide (SCCO 2 ) generator, a supercritical carbon dioxide (SCCO 2 ) circulator, a carbon dioxide (CO 2 ) feedback, an ozone gas generator, a vapor generator, and an exhaust. 
   
   
       46 . The apparatus of  claim 45 , wherein the supercritical carbon dioxide (SCCO 2 ) generator includes a carbon dioxide (CO 2 ) pressure pump and a carbon dioxide (CO 2 ) heater. 
   
   
       47 . The apparatus of  claim 31 , wherein the first reactant is supercritical carbon dioxide (SCCO 2 ) and a first of the separate chambers includes a heater jacket, a carbon dioxide (CO 2 ) source, a supercritical carbon dioxide (SCCO 2 ) generator, a supercritical carbon dioxide (SCCO 2 ) circulator, and a carbon dioxide (CO 2 ) feedback. 
   
   
       48 . The apparatus of  claim 47 , wherein the supercritical carbon dioxide (SCCO 2 ) generator includes a carbon dioxide (CO 2 ) pressure pump and a carbon dioxide (CO 2 ) heater. 
   
   
       49 . The apparatus of  claim 47 , wherein the second reactant is an ozone-based reactant, and a first of the separate chambers includes a heater jacket, an ozone gas generator, a vapor generator, and an exhaust. 
   
   
       50 . The apparatus of  claim 49 , wherein the ozone-based reactant is ozone vapor.