Plasma processing apparatus

Abstract

A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

1 . A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time, the apparatus comprising:
 a vertically elongated process container having a process field configured to accommodate the target objects and to be set in an airtightly state;   a holder configured to support the target objects at intervals in a vertical direction inside the process container;   a gas supply system configured to supply a process gas into the process container;   an exhaust system configured to exhaust gas from inside the process container; and   an activation mechanism configured to turn the process gas into plasma,   wherein the activation mechanism comprises   a vertically elongated plasma generation box attached to the process container at a position corresponding to the process field to form a plasma generation area airtightly communicating with the process field,   an ICP (inductively coupled plasma) electrode provided to the plasma generation box, and   an RF (radio frequency) power supply connected to the electrode.   
   
   
       2 . The apparatus according to  claim 1 , wherein the gas supply system includes a gas nozzle configured to supply the gas and disposed inside the plasma generation box. 
   
   
       3 . The apparatus according to  claim 1 , wherein the plasma generation box is disposed outside and along a sidewall of the process container. 
   
   
       4 . The apparatus according to  claim 1 , wherein the plasma generation box is disposed inside and along a sidewall of the process container. 
   
   
       5 . The apparatus according to  claim 1 , wherein the RF power supply is set to have an RF power frequency within a range of 4 MHz to 27.12 MHz. 
   
   
       6 . The apparatus according to  claim 1 , wherein an electrostatic shield is interposed between the plasma generation box and the electrode and comprises a conductive body insulated from the electrode and grounded. 
   
   
       7 . The apparatus according to  claim 1 , wherein the electrode extends along a side surface of the plasma generation box. 
   
   
       8 . The apparatus according to  claim 7 , wherein the electrode comprises a belt-shaped electrode having a predetermined width. 
   
   
       9 . The apparatus according to  claim 8 , wherein the belt-shaped electrode comprises a metal plate, metal punching plate, or metal mesh. 
   
   
       10 . The apparatus according to  claim 7 , wherein the electrode comprises a meandering electrode curved at a plurality of positions on a plane substantially parallel with a side surface of the plasma generation box. 
   
   
       11 . The apparatus according to  claim 7 , wherein the electrode extends along opposite side surfaces of the plasma generation box while being bent back at an end of the plasma generation box. 
   
   
       12 . The apparatus according to  claim 11 , wherein the electrode comprises first and second electrode portions connected to each other in series with a capacitor interposed therebetween near a bent back position. 
   
   
       13 . The apparatus according to  claim 7 , wherein the electrode comprises a main electrode portion extending in a first direction from the RF power supply and a plurality of branch electrode portions branching from the main electrode portion and extending in a direction across the first direction. 
   
   
       14 . The apparatus according to  claim 10 , wherein the electrode comprises a whorl electrode forming a whorl pattern on a plane substantially parallel with a side surface of the plasma generation box. 
   
   
       15 . The apparatus according to  claim 1 , wherein a portion of the electrode nearest to the target objects is distant from the target objects by a distance of 40 mm or more. 
   
   
       16 . The apparatus according to  claim 1 , wherein the plasma generation box is formed by a cover having a U-shaped cross-section, which includes a pair of sidewalls extending from the process container in a radial direction and facing each other, and a backside wall that connects outer ends of the pair of sidewalls to each other. 
   
   
       17 . The apparatus according to  claim 16 , wherein the electrode comprises first and second electrode portions respectively disposed along the pair of sidewalls and forming a substantially symmetric shape. 
   
   
       18 . The apparatus according to  claim 16 , wherein the electrode is disposed along only one of the sidewalls. 
   
   
       19 . The apparatus according to  claim 16 , wherein the electrode comprises first and second electrodes respectively disposed along the pair of sidewalls, and the RF power supply comprises first and second RF power supplies respectively connected to the first and second electrodes. 
   
   
       20 . The apparatus according to  claim 1 , wherein the electrode comprises first and second ends respectively connected to the RF power supply and a grounded portion to form a circuitry line therebetween without the plasma generation area included thereon.