Method for forming a photonic band-gap structure and a device fabricated in accordance with such a method

Abstract

A device for application in the high frequency field and a method for forming a photonic band-gap structure are provided. The device being mountable on a primary substrate for forming the device. The device being formed by forming conformal coplanar waveguide metallizations on surface areas of two substrates, connecting the conformal coplanar waveguide metallizations of the two substrates, and structured back-etching of the two substrates, starting at surface areas of the two substrates that are opposite the coplanar waveguide metallizations.

1 . A method for forming a photonic band-gap structure on a substrate, the method comprising the steps of:
 forming conformal coplanar waveguide metallizations on surface areas of two substrates;   connecting the conformal coplanar waveguide metallizations of the two substrates; and   structured back-etching the two substrates, starting at surface areas of the two substrates that are opposite the coplanar waveguide metallizations.   
     
     
         2 . The method according to  claim 1 , wherein prior to forming the coplanar waveguide metallizations, additional layers formed of dielectric insulating layers are formed on respective surface areas of the two substrates, which are removed from the back-etched areas upon completion of the structured back-etching of the substrates. 
     
     
         3 . The method according to  claim 1 , wherein the two substrates are structurally back-etched to form respective periodically arrayed vertical substrate surface areas. 
     
     
         4 . The method according to  claim 2 , wherein the coplanar waveguide metallizations are formed linear and/or meander-shaped over the respective dielectric insulating layers of the two substrates. 
     
     
         5 . The method according to  claim 1 , wherein the two substrates are back-etched using an anisotropic or wet chemical etching procedure with a KOH solution. 
     
     
         6 . The method according to  claim 1 , wherein the two substrates are back-etched by applying an advanced silicon etching method. 
     
     
         7 . The method according to  claim 2 , wherein the dielectric insulating layers are removed by a dry etching procedure. 
     
     
         8 . The method according to  claim 1 , wherein the coplanar waveguide metallizations are connected to one another by bonding via a microwave-heat treatment. 
     
     
         9 . The method according to  claim 1 , wherein the photonic band-gap structure is cut using a cutting device. 
     
     
         10 . The method according to  claim 9 , wherein the cut photonic band-gap structure is at least partially inserted in a back-etched groove of a primary substrate and mounted thereon. 
     
     
         11 . The method according to  claim 1 , wherein the photonic band-gap structure is formed as a filter for application in the microwave and/or millimeter wave fields, which are in the high frequency field. 
     
     
         12 . The method according to  claim 1 , wherein the photonic band-gap structure is formed as a hollow cavity or a micro cavity, for application in the microwave and/or millimeter wave fields, which are in the high frequency field, and wherein at least one periodic substrate area of the photonic band-gap structure is removed for forming of the hollow cavity or micro cavity. 
     
     
         13 . The method according to  claim 10 , wherein the two substrates and the primary substrate are silicon semiconductor substrates. 
     
     
         14 . The method according to  claim 2 , wherein the dielectric insulating layers are made of an inorganic insulation material, the inorganic insulation material being a silicon oxide, a silicon dioxide, a silicon nitride, or silicon with air gaps. 
     
     
         15 . The method according to  claim 1 , wherein the coplanar waveguide metallizations are aluminum, copper, silver, gold, or titanium.