Semiconductor device, substrate and semiconductor device manufacturing method

Abstract

The semiconductor device can prevent damages on a semiconductor chip even when a soldering material is used for bonding the back surface of the semiconductor chip to the junction plane of a chip junction portion such as an island or a die pad. This semiconductor device includes a semiconductor chip and a chip junction portion having a junction plane that is bonded to the back surface of the semiconductor chip with a soldering material. The junction plane is smaller in size than the back surface of the semiconductor chip. This semiconductor device may further include a plurality of extending portions which extend respectively from the periphery of the junction plane to directions parallel with the junction plane.

1 . A semiconductor device, comprising:
 a semiconductor chip; and   a chip junction portion having a junction plane bonded to a back surface of the semiconductor chip with a soldering material,   wherein the junction plane is smaller in size than the back surface of the semiconductor chip.   
     
     
         2 . The semiconductor device according to  claim 1  further comprising a plurality of extending portions each extending from a periphery of the junction plane in a direction parallel to the junction plane. 
     
     
         3 . The semiconductor device according to  claim 2 , wherein the extending portion has a tip portion that reaches an outside of the periphery of the semiconductor chip in a state where the semiconductor chip is bonded on the junction plane as seen a surface of the semiconductor chip perpendicularly downward from top. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein the junction plane is formed in a rectangular shape and the extending portion extends from an angular portion of the junction plane. 
     
     
         5 . The semiconductor device according to  claim 4  wherein the extending portion extends from each of four angular portions of the junction plane. 
     
     
         6 . A semiconductor device, comprising:
 a semiconductor chip;   an island to which the semiconductor chip is die-bonded with a die bonding material; and   a coating layer which is formed in a part of the surface of the island and on which the die bonding material is difficult to wet more than the island,   wherein an exposed portion of the island on which the coating layer is not formed includes a die bonding portion opposed to a back surface of the semiconductor chip and being smaller in size than the back surface of the semiconductor chip, and an alignment portion extending from the die bonding portion such that it includes a position opposed to an angle of the back surface of the semiconductor chip on the island.   
     
     
         7 . The semiconductor device according to  claim 6 , wherein the die bonding material is a solder and the coating layer is formed of a material on which the solder does not wet. 
     
     
         8 . A substrate, comprising:
 an island to which a semiconductor chip is to be die-bonded with a die bonding material; and   a coating layer which is formed in a part of a surface of the island and on which the die bonding material is difficult to wet more than the island,   wherein an exposed portion of the island on which the coating layer is not formed includes a die bonding portion to be opposed to a back surface of the semiconductor chip and being smaller in size than the back surface of the semiconductor chip, and an alignment portion extending from the die bonding portion such that it includes a position to be opposed to an angle of the back surface of the semiconductor chip on the island.   
     
     
         9 . The substrate according to  claim 8 , wherein the die bonding material is a solder and the coating layer is formed of a material to which the solder does not wet. 
     
     
         10 . A method for manufacturing a semiconductor device, comprising the steps of:
 preparing an island of which a part of a surface is formed with a coating layer on which die bonding material is difficult to wet more than the island, an exposed portion on which the coating layer is not formed including a die bonding portion smaller in size than a back surface of a semiconductor chip and an alignment portion extending from the die bonding portion so as to include a position to be opposed to an angle of the back surface of the semiconductor chip;   coating the die bonding material on the exposed portion;   mounting the semiconductor chip on the island applied with the die bonding material in the coating step after opposing the back surface of the semiconductor chip to the die bonding portion; and   aligning the semiconductor chip by melting the die bonding material in order to move the angle of the semiconductor chip on the alignment portion.   
     
     
         11 . The method for manufacturing the semiconductor device according to  claim 10 , wherein the step of preparing an island comprises:
 forming the coating layer by applying a material which is difficult to wet the die bonding material more than the island on the surface of the island except for a region corresponding to the exposed portion.   
     
     
         12 . The method for manufacturing the semiconductor device according to  claim 11 , wherein the die bonding material is a solder and the coating layer is formed of a material to which the solder does not wet. 
     
     
         13 . The method for manufacturing the semiconductor device according to  claim 10 , wherein the die bonding material is a solder and the coating layer is formed of a material to which the solder does not wet.