Pad conditioner of semiconductor wafer polishing apparatus and manufacturing method thereof

Abstract

A pad conditioner of semiconductor wafer polishing apparatus and a pad conditioner manufacturing method thereof are provided with a uniform conditioning for a polishing pad of a polishing apparatus, the polishing apparatus being for evenly planarizing a metal layer formed on the surface of wafer in a semiconductor device manufacturing processor. The pad conditioner may include a substrate constructed of a flat plate of disk shape, a coating part formed with a given thickness on the substrate, and a plurality of protrusion parts formed on the coating part, the plurality of protrusion parts having a plurality of polishing members based on the same size in a predetermined grouping or pattern.

1 . A pad conditioner for use in a semiconductor wafer polishing apparatus, the conditioner comprising:
 a substrate constructed of a flat plate of disk shape;   a coating part formed with a given thickness on the substrate; and   a plurality of protrusion parts formed on the coating part, the plurality of protrusion parts having a plurality of polishing members in a predetermined grouping thereon.   
   
   
       2 . The conditioner of  claim 1 , wherein the plurality of polishing members are diamond particles. 
   
   
       3 . The conditioner of  claim 1 , wherein the coating part is formed with a spiral structure. 
   
   
       4 . The conditioner of  claim 1 , wherein the sizes of the polishing members are 103 μm to 105 μm. 
   
   
       5 . The conditioner of  claim 1 , wherein the height of the top of each of the polishing members from the top surface of the coating part is 80 μm to 90 μm. 
   
   
       6 . The conditioner of  claim 1 , wherein the coating part is formed with a radial structure. 
   
   
       7 . The conditioner of  claim 1 , wherein the protrusion parts are arrayed in a dot spiral type on the coating part. 
   
   
       8 . The conditioner of  claim 1 , wherein between the protrusion parts an interval to increase a flow level of slurry is formed. 
   
   
       9 . The conditioner of  claim 8 , wherein the interval between the protrusion parts is 0.5 mm to 1.5 mm. 
   
   
       10 . A pad conditioner for use in a semiconductor wafer polishing apparatus, the conditioner comprising:
 a substrate constructed of a flat plate of disk shape;   a coating part of circle shape formed with a given thickness on the substrate; and   a plurality of protrusion parts formed on the coating part, the plurality of protrusion parts having a plurality of polishing members in a predetermined grouping.   
   
   
       11 . The conditioner of  claim 10 , wherein the plurality of polishing members are diamond particles. 
   
   
       12 . The conditioner of  claim 10 , wherein the sizes of the polishing members are 103 μm to 105 μm. 
   
   
       13 . The conditioner of  claim 10 , wherein the height of the top of each of the polishing members from the top surface of the coating part is 80 μm to 90 μm. 
   
   
       14 . The conditioner of  claim 10 , wherein between the protrusion parts an interval to increase a flow level of slurry is formed. 
   
   
       15 . The conditioner of  claim 14 , wherein the interval between the protrusion parts is 0.5 mm to 1.5 mm. 
   
   
       16 . The conditioner of  claim 10 , wherein the protrusion parts are arrayed in at least one dot circle shape. 
   
   
       17 . The conditioner of  claim 10 , wherein the protrusion parts are arrayed in a dot spiral type. 
   
   
       18 . A method of manufacturing a pad conditioner, comprising:
 fusing a coating part on a substrate;   forming a plurality of protrusion parts on the coating part; and   electroplating numerous polishing members in a predetermined grouping on the plurality of protrusion parts.   
   
   
       19 . The method of  claim 18 , wherein an interval between the protrusion parts is 0.5 mm to 1.5 mm, and the protrusion parts have a mutually spaced space to increase a flow level of slurry in a CMP (Chemical Mechanical Polishing) process. 
   
   
       20 . The method of  claim 18 , wherein the coating part is formed with a spiral structure. 
   
   
       21 . The method of  claim 18 , wherein the sizes of the polishing members are 103 μm to 105 μm. 
   
   
       22 . The method of  claim 18 , wherein the height of the top of each of the polishing members from the top surface of the coating part is 80 μm to 90 μm. 
   
   
       23 . The method of  claim 18 , wherein the coating part is formed with a radial structure. 
   
   
       24 . The method of  claim 18 , wherein the protrusion parts are arrayed in a dot spiral type on the coating part. 
   
   
       25 . The method of  claim 18 , wherein the polishing members are diamond particles.