Rinsing method and developing method

Abstract

A rinsing process is performed by supplying a rinsing-liquid onto a substrate with a light-exposed pattern formed thereon and treated by a developing process. The rinsing liquid contains a polyethylene glycol family surfactant or an acetylene glycol family surfactant in a critical micelle concentration or less. Preferably, the surfactant includes a hydrophobic group having a carbon number of larger than 11 and having no double bond or triple bond therein.

1 - 6 . (canceled) 
   
   
       7 . A developing method for developing a light-exposed pattern, after a resist film formed on a substrate is subjected to light exposure with a predetermined pattern, the method comprising:
 applying a developing solution onto the resist film disposed on the substrate after the light exposure, and performing development;   throwing off the developing solution from the substrate after the development;   supplying a rinsing liquid onto the substrate, wherein the rinsing liquid contains a polyethylene glycol family surfactant in a critical micelle concentration or less, and the surfactant includes a hydrophobic group having a carbon number of larger than 11 and including only single bonds and excluding double and triple bonds;   supplying purified water onto the substrate to replace the rinsing liquid present on the substrate with purified water; and   rotating the substrate to expand purified water on the substrate, and to throw off purified water to dry the substrate.   
   
   
       8 . The developing method according to  claim 7 , wherein the surfactant contained in the rinsing liquid has a molecular weight of 1,280 or more. 
   
   
       9 . The developing method according to  claim 7 , wherein supplying the rinsing liquid onto the substrate uses a nozzle configured to deliver the rinsing liquid essentially as a belt, and comprises moving the nozzle for scanning above the substrate, or setting the nozzle above the substrate to be directed in a radial direction of the substrate and rotating the substrate at a predetermined rotation number, while delivering the rinsing liquid essentially as a belt from the nozzle. 
   
   
       10 . A developing method for developing a light-exposed pattern, after a resist film formed on a substrate is subjected to light exposure with a predetermined pattern, the method comprising:
 applying a developing solution onto the resist film disposed on the substrate after the light exposure, and performing development;   throwing off the developing solution from the substrate after the development;   supplying purified water onto the substrate, supplying a rinsing liquid onto the substrate to replace purified water present on the substrate with the rinsing liquid, wherein the rinsing liquid contains a polyethylene glycol family surfactant in a critical micelle concentration or less, and the surfactant includes a hydrophobic group having a carbon number of larger than 11 and including only single bonds and excluding double and triple bonds; and   rotating the substrate to expand the rinsing liquid on the substrate, and to throw off the rinsing liquid to dry the substrate.   
   
   
       11 . The developing method according to  claim 10 , wherein the surfactant contained in the rinsing liquid has a molecular weight of 1,280 or more. 
   
   
       12 . The developing method according to  claim 10 , wherein supplying the rinsing liquid onto the substrate uses a nozzle configured to deliver the rinsing liquid essentially as a belt, and comprises moving the nozzle for scanning above the substrate, or setting the nozzle above the substrate to be directed in a radial direction of the substrate and rotating the substrate at a predetermined rotation number, while delivering the rinsing liquid essentially as a belt from the nozzle. 
   
   
       13 . A developing method for developing a light-exposed pattern, after a resist film formed on a substrate is subjected to light exposure with a predetermined pattern, the method comprising:
 applying a developing solution onto the resist film disposed on the substrate after the light exposure, and performing development;   throwing off the developing solution from the substrate after the development;   supplying purified water onto the substrate,   supplying a rinsing liquid onto the substrate to replace purified water present on the substrate with the rinsing liquid, wherein the rinsing liquid contains a polyethylene glycol family surfactant in a critical micelle concentration or less, and the surfactant includes a hydrophobic group having a carbon number of larger than 11 and including only single bonds and excluding double and triple bonds;   supplying purified water onto the substrate to replace the rinsing liquid present on the substrate with purified water; and   rotating the substrate to expand purified water on the substrate, and to throw off purified water to dry the substrate.   
   
   
       14 . The developing method according to  claim 13 , wherein the surfactant contained in the rinsing liquid has a molecular weight of 1,280 or more. 
   
   
       15 . The developing method according to  claim 13 , wherein supplying the rinsing liquid onto the substrate uses a nozzle configured to deliver the rinsing liquid essentially as a belt, and comprises moving the nozzle for scanning above the substrate, or setting the nozzle above the substrate to be directed in a radial direction of the substrate and rotating the substrate at a predetermined rotation number, while delivering the rinsing liquid essentially as a belt from the nozzle. 
   
   
       16 . A developing method for developing a light-exposed pattern, after a resist film formed on a substrate is subjected to light exposure with a predetermined pattern, the method comprising:
 applying a developing solution onto the resist film disposed on the substrate after the light exposure, and performing development;   throwing off the developing solution from the substrate after the development;   supplying a rinsing liquid onto the substrate, wherein the rinsing liquid contains a polyethylene glycol family surfactant in a critical micelle concentration or less, and the surfactant includes a hydrophobic group having a carbon number of larger than 11 and including only single bonds and excluding double and triple bonds;   throwing off the rinsing liquid from the substrate;   applying a developing solution onto the substrate again, and performing development;   throwing off the developing solution from the substrate after the development;   supplying purified water onto the substrate; and rotating the substrate to expand purified water on the substrate, and to throw off purified water to dry the substrate.   
   
   
       17 . The developing method according to  claim 16 , wherein the surfactant contained in the rinsing liquid has a molecular weight of 1,280 or more. 
   
   
       18 . The developing method according to  claim 16 , wherein supplying the rinsing liquid onto the substrate uses a nozzle configured to deliver the rinsing liquid essentially as a belt, and comprises moving the nozzle for scanning above the substrate, or setting the nozzle above the substrate to be directed in a radial direction of the substrate and rotating the substrate at a predetermined rotation number, while delivering the rinsing liquid essentially as a belt from the nozzle. 
   
   
       19 . A developing method for developing a light-exposed pattern, after a resist film formed on a substrate is subjected to light exposure with a predetermined pattern, the method comprising:
 supplying a rinsing liquid onto the substrate, wherein the rinsing liquid contains a polyethylene glycol family surfactant in a critical micelle concentration or less, and the surfactant includes a hydrophobic group having a carbon number of larger than 11 and including only single bonds and excluding double and triple bonds;   throwing off the rinsing liquid from the substrate to dry the substrate;   applying a developing solution onto the substrate, and performing development of the resist film;   throwing off the developing solution from the substrate after the development;   supplying purified water onto the substrate; and   rotating the substrate to expand purified water on the substrate, and to throw off purified water to dry the substrate.   
   
   
       20 . The developing method according to  claim 19 , wherein the surfactant contained in the rinsing liquid has a molecular weight of 1,280 or more. 
   
   
       21 . The developing method according to  claim 19 , wherein supplying the rinsing liquid onto the substrate uses a nozzle configured to deliver the rinsing liquid essentially as a belt, and comprises moving the nozzle for scanning above the substrate, or setting the nozzle above the substrate to be directed in a radial direction of the substrate and rotating the substrate at a predetermined rotation number, while delivering the rinsing liquid essentially as a belt from the nozzle.