Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes a semiconductor constituent provided with a semiconductor substrate and a plurality of electrodes for external connection provided under the semiconductor substrate. A lower-layer insulating film is provided under and around the semiconductor constituent. A plurality of lower-layer wirings are electrically connected to the electrodes for external connection of the semiconductor constituent, and provided under the lower-layer insulating film. An insulation layer is provided on the lower-layer insulating film in the periphery of the semiconductor constituent. An upper-layer insulating film is provided on the semiconductor constituent and the Insulation layer. A plurality of upper-layer wirings are provided on the upper-layer insulating film. A base plate on which the semiconductor constituent and the insulation layer are mounted is removed.

1 . A semiconductor device comprising:
 a semiconductor constituent having a semiconductor substrate and a plurality of electrodes for external connection provided under the semiconductor substrate;   a lower-layer insulating film provided under and around the semiconductor constituent;   a plurality of lower-layer wirings electrically connected to the electrodes for external connection of the semiconductor constituent, and provided under the lower-layer insulating film;   an insulation layer provided on the lower-layer insulating film in the periphery of the semiconductor constituent;   an upper-layer insulating film provided on the semiconductor constituent and the insulation layer; and   a plurality of upper-layer wirings provided on the upper-layer insulating film,   wherein a base plate on which the lower-layer insulating film was mounted is removed.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the semiconductor constituent is bonded onto the lower-layer insulating film via an adhesive layer. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein a vertical conducting unit is provided to be electrically connected with the lower-layer wiring and the upper-layer wiring in a through hole formed in the lower-layer insulating film, the insulation layer, and the upper-layer insulating film. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein another lower-layer wiring is provided to be electrically connected with each of the lower-layer wirings on the upper surface of the lower-layer insulating film in the periphery of the semiconductor constituent and another upper-layer wiring is provided to be electrically connected with each of the upper-layer wirings on the lower surface of the upper-layer insulating film. 
     
     
         5 . The semiconductor device according to  claim 4 , wherein the semiconductor constituent is bonded to a lower surface of the upper-layer insulating film via an adhesive layer. 
     
     
         6 . The semiconductor device according to  claim 1 , further comprising a circuit substrate provided with another lower-layer wiring and another upper-layer wiring, and having a vertical conducting unit electrically connecting the another lower-layer wiring, another upper-layer wiring provided on an upper part of the insulation layer in the periphery of the semiconductor constituent, wherein the lower-layer wiring is electrically connected to the another lower-layer wiring and the upper-layer wiring is electrically connected to the another upper-layer wiring. 
     
     
         7 . The semiconductor device according to  claim 6 , wherein an upper surface of the circuit substrate is flush with an upper surface portion of the insulation layer on which the circuit substrate is not provided. 
     
     
         8 . The semiconductor device according to  claim 1 , further comprising a circuit substrate provided with another lower-layer wiring and another upper-layer wiring, and having a vertical conducting unit electrically connecting the another lower-layer wiring and the another upper-layer wiring provided inside the insulation layer in the periphery of the semiconductor constituent, wherein the lower-layer wiring is electrically connected to the another lower-layer wiring and the upper-layer wiring is electrically connected to the another upper-layer wiring. 
     
     
         9 . The semiconductor device according to  claim 8 , wherein the insulation layer is configured by laminating a plurality of sheets, and the circuit substrate is positioned with a through-thickness center thereof allowed to coincide with a through-thickness center of the insulation layer. 
     
     
         10 . The semiconductor device according to  claim 8 , wherein the insulation layer is configured by laminating an upper-side insulation layer sheet and a lower-side insulation layer sheet, and the circuit substrate is embedded in the upper-side insulation layer sheet and the lower-side insulation layer sheet. 
     
     
         11 . The semiconductor device according to  claim 1 , further comprising a lower-layer overcoat film having an opening in a portion corresponding to connection of the lower-layer wiring under the lower-layer insulating film including the lower-layer wiring. 
     
     
         12 . The semiconductor device according to  claim 11 , further comprising a solder layer provided to be connected with connection pad of the lower-layer wiring inside and below an opening of the lower-layer overcoat film. 
     
     
         13 . The semiconductor device according to  claim 1 , wherein the lower-layer wiring and the upper-layer wiring have a multiple-layer wiring structure. 
     
     
         14 . The semiconductor device according to  claim 13 , wherein the lower-layer insulating film has a second lower-layer wiring on an upper surface thereof. 
     
     
         15 . The semiconductor device according to  claim 14 , wherein of the lower-layer wiring and the second lower-Layer wiring, only the lower-layer wiring is directly connected to the vertical conducting unit. 
     
     
         16 . The semiconductor device according to  claim 1 , wherein the upper-layer insulating film has a second upper-layer wiring on a lower surface thereof. 
     
     
         17 . The semiconductor device according to  claim 1 , wherein the semiconductor constituent has a sealing film provided between the electrodes for external connection under the semiconductor substrate. 
     
     
         18 . The semiconductor device according to  claim 1 , wherein the semiconductor constituent has an adhesive layer provided between the electrodes for external connection under the semiconductor substrate. 
     
     
         19 . A semiconductor device comprising:
 a semiconductor constituent having a semiconductor substrate and a plurality of electrodes for external connection provided under the semiconductor substrate;   a lower-layer insulating film provided under and around the semiconductor constituent;   a lower-layer insulation layer and an upper-layer insulation layer which are provided on an upper side of the lower-layer insulating film in the periphery of the semiconductor constituent;   a circuit substrate provided between the lower-layer insulation layer and the upper-layer insulation layer and having a plurality of intermediate wirings;   a plurality of lower-layer wirings provided to be connected with the electrodes for external connection of the semiconductor constituent and the intermediate wirings of the circuit substrate under the lower-layer insulating film, and an upper layer insulating film provided on the semiconductor constituent and the upper-layer insulation layer; and   a plurality of upper-layer wirings provided to be connected with the intermediate wirings of the circuit substrate on the upper-layer insulating film wherein a base plate on which the lower-layer insulating film was mounted is removed.   
     
     
         20 . The semiconductor device according to  claim 19 , wherein the intermediate wirings of the circuit substrate are formed on an upper surface and a lower surface of the circuit substrate, and the circuit substrate further has a vertical conducting unit which connects the intermediate wirings formed on the upper surface and the lower surface. 
     
     
         21 . A method for manufacturing a semiconductor device, comprising:
 forming a lower-layer insulating film on a base plate;   fixing, on the lower-layer insulating film, a plurality of semiconductor constituents each having a semiconductor substrate and a plurality of electrodes for external connection provided under the semiconductor substrate;   forming an insulation layer on the lower-layer insulating film in the periphery of the semiconductor constituents and forming an upper-layer insulating film on the semiconductor constituents and the insulation layer;   removing the base plate;   forming lower-layer wirings connected with the electrodes for external connection of the semiconductor constituent under the lower-layer insulating film and forming upper-layer wirings on the upper-layer insulating film; and   obtaining a plurality of semiconductor devices by cutting the lower-layer insulating film, the insulation layer, and the upper-layer insulating film between the semiconductor constituents.   
     
     
         22 . The method for manufacturing a semiconductor device according to  claim 21 , wherein the fixing said plurality of semiconductor constituents on the lower-layer insulating film includes supplying a liquid-form adhesive material onto the lower-layer insulating film in advance and hot-pressing the semiconductor constituent onto the lower-layer insulating film. 
     
     
         23 . The method for manufacturing a semiconductor device according to  claim 21 , wherein the fixing said plurality of semiconductor constituents on the lower-layer insulating film includes supplying a sheet-form adhesive material onto the lower-layer insulating film in advance and hot-pressing the semiconductor constituent onto the lower-layer insulating film. 
     
     
         24 . The method for manufacturing a semiconductor device according to  claim 21 , wherein the forming the lower-layer wirings and the upper-layer wirings includes forming through holes in the lower-layer insulating film, the insulation layer, and the upper-layer insulating film and forming vertical conducting units, inside the through holes, to be connected with the lower-layer wirings and the upper-layer wirings. 
     
     
         25 . The method for manufacturing a semiconductor device according to  claim 21 , further including forming another lower-layer wirings, in advance in the periphery of a semiconductor constituent mounting areas on the lower-layer insulating film, and forming another upper-layer wirings, in advance under the upper-layer insulating film, the lower-layer wiring being formed to be connected with the another lower-layer wiring and the upper-layer wiring being formed to he connected with the another upper-layer wiring on the upper-layer insulating film. 
     
     
         26 . The method for manufacturing a semiconductor device according to  claim 21 , wherein the forming the insulation layer and the upper-layer wirings includes arranging the circuit substrate having another lower-layer wiring, another upper-layer wiring, and a vertical conducting unit which connects the wirings on the insulation layer under the upper-layer wiring in the periphery of the semiconductor constituent, and the lower-layer wirings are formed to be connected to the another lower-layer wiring and the upper-layer wirings are formed to be connected to the another upper-layer wiring on the upper-layer insulating film. 
     
     
         27 . The method for manufacturing a semiconductor device according to  claim 21 , wherein the upper-layer insulating film is initially formed under a sub-base plate and the step of removing the base plate includes a step of removing the sub-base plate. 
     
     
         28 . The method for manufacturing a semiconductor device according to  claim 21 , wherein the step forming the Lower-layer insulating film on the base plate includes a step of forming a lower-layer protection metal layer and a lower-layer metallic underlayer on the base plate, and forming a lower-layer insulating film on the lower-layer metallic underlayer. 
     
     
         29 . The method for manufacturing a semiconductor device according to  claim 28 , wherein the forming the upper-layer insulating film on the semiconductor constituent and the insulation layer includes a step of forming an upper-layer protection metal layer and an upper-layer metallic underlayer under the sub-base plate, and forming the upper-layer insulating film under the upper-layer metallic underlayer. 
     
     
         30 . The method for manufacturing a semiconductor device according to  claim 29 , wherein the removing the base plate and the sub-base plate includes removing the lower-layer protection metal layer and the upper-layer protection metal layer. 
     
     
         31 . The method for manufacturing a semiconductor device according to  claim 29 , wherein the forming the lower-layer insulating film on the lower-layer metallic underlayer includes carrying out surface roughening treatment in advance to the upper surface of the lower-layer metallic underlayer, and the forming the upper-layer insulating film under the upper-layer metallic underlayer includes carrying out surface roughening treatment in advance to the lower surface of the upper-layer metallic underlayer. 
     
     
         32 . The method for manufacturing a semiconductor device according to  claim 21 , wherein the forming the lower-layer wiring includes forming the lower-layer metallic underlayer, another lower-layer metallic underlayer, and a lower-layer metallic upperlayer by electrolytic plating under the lower-layer insulating film in that order. 
     
     
         33 . The method for manufacturing a semiconductor device according to  claim 32 , wherein the forming the upper-layer wiring includes forming an upper-layer metallic underlayer, another upper-layer metallic underlayer, and an upper-layer metallic upperlayer by electrolytic plating on the upper-layer insulating film in that order. 
     
     
         34 . The method for manufacturing a semiconductor device according to  claim 33 , wherein the base plate, the lower-layer metallic underlayer, the another lower-layer metallic underlayer, the lower-layer metallic upperlayer, the sub-base plate, the upper-layer metallic underlayer, the another upper-layer metallic underlayer, and the upper-layer metallic upperlayer are made of copper, and the lower-layer protection metal layer and the upper-layer protection metal layer are made of nickel. 
     
     
         35 . A method for manufacturing a semiconductor device, comprising:
 forming a lower-layer insulating film on a base plate;   fixing, on the lower-layer insulating film, a plurality of semiconductor constituents each having a semiconductor substrate and a plurality of electrodes for external connection provided under the semiconductor substrate;   forming a lower-side insulation layer and an upper-side insulation layer on an upper side of the lower-layer insulating film in the peripheries of the semiconductor constituents, providing a circuit substrate having intermediate wirings between the lower-side insulation layer and the upper-side insulation layer, and forming an upper-layer insulating film on the semiconductor constituents and the upper-side insulation layer;   removing the base plate from the lower-layer insulating film;   forming lower-layer wirings to be connected to electrodes for external connection of the semiconductor constituent and the intermediate wirings of the circuit substrate under the lower-side insulating film, and forming upper-layer wirings to be connected to the intermediate wirings of the circuit substrate on the upper-layer insulating film; and   cutting the lower-layer insulating film, the lower-layer insulation layer, the circuit substrate, the upper-layer insulation layer, and the upper-layer insulating film between the semiconductor constituents and obtaining a plurality of semiconductor devices.   
     
     
         36 . The method for manufacturing a semiconductor device according to  claim 35 , wherein the intermediate wirings of the circuit substrate are formed on the upper surface and the lower surface of the circuit substrate, and the circuit substrate has a vertical conducting unit which connects the intermediate wirings formed on the upper surface and the lower surface.