Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus

Abstract

A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.

1 . A crystallization method which generates a crystallized substance by irradiating a non-single-crystal substance with a light beam having a predetermined light intensity distribution, comprising:
 a first irradiation step of irradiating the non-single-crystal substance with a first light beam having a first light intensity distribution; and   a second irradiation step of irradiating a molten part of the non-single-crystal substance with a second light beam having a second light intensity distribution substantially different from the first light intensity distribution within a time in which the non-single-crystal substance is molten by the first irradiation step.   
   
   
       2 . The method according to  claim 1 , wherein the non-single-crystal semiconductor is irradiated with the first light beam subjected to phase modulation through the first optical modulation element in the first irradiation step, and
 the non-single-crystal semiconductor is irradiated with the second light beam subjected to phase modulation through the second optical modulation element having different characteristics from those of the first optical modulation element in the second irradiation step.   
   
   
       3 . The method according to  claim 1 , wherein the first light beam is caused to enter a common optical modulation element including the first and second optical modulation elements, and the non-single-crystal semiconductor is irradiated with the first light beam subjected to phase modulation through the common optical modulation element in the first irradiation step, and
 the second light beam has characteristics different from those of the first light beam and is caused to enter the common optical modulation element and the non-single-crystal semiconductor is irradiated with the second light beam subjected to phase modulation through the common optical element in the second irradiation step.   
   
   
       4 . The method according to  claim 1 , wherein the first light intensity distribution has a plurality of V-shaped intensity patterns, and
 the second light intensity distribution has a plurality of patterns each having a central peak shape.   
   
   
       5 . A crystallization method which generates a crystallized substance by irradiating a non-single-crystal substance with a light beam having a predetermined light intensity distribution, comprising:
 irradiating firstly the non-single-crystal substance with a first light beam which is to have on the non-single-crystal substance a light intensity distribution having at least two V-shaped unit intensity distributions which are adjacent to define a chevron unit light intensity distribution therebetween; and   irradiating secondly a high-temperature region formed to the non-single-crystal substance in accordance with an apex of the chevron unit light intensity distribution with a light beam having a second light intensity distribution after an elapse of a predetermined time from start of the first irradiation step in order to compensate flattening of a temperature gradient with time in the high-temperature region of the non-single-crystal substance.   
   
   
       6 . The method according to  claim 5 , wherein the non-single-crystal semiconductor is irradiated with the first light beam subjected to phase modulation through the first optical modulation element in the firstly irradiating, and
 the non-single-crystal semiconductor is irradiated with the second light beam subjected to phase modulation through the second optical modulation element having different characteristics from those of the first optical modulation element in the secondly irradiating.   
   
   
       7 . The method according to  claim 5 , wherein the first light beam is caused to enter a common optical modulation element including the first and second optical modulation elements, and the non-single-crystal semiconductor is irradiated with the first light beam subjected to phase modulation through the common optical modulation element in the firstly irradiating, and
 the second light beam has characteristics different from those of the first light beam and is caused to enter the common optical modulation element and the non-single-crystal semiconductor is irradiated with the second light beam subjected to phase modulation through the common optical element in the secondly irradiating.