Polysilazane perhydride solution and method of manufacturing a semiconductor device using the same

Abstract

Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

1 . A polysilazane perhydride solution comprising:
 dibutyl ether having a butanol concentration of 30 ppm or less; and   polysilazane perhydride dissolved in the dibutyl ether.   
   
   
       2 - 20 . (canceled) 
   
   
       21 . The polysilazane perhydride solution according to  claim 1 , wherein the solution is used for manufacturing a semiconductor device. 
   
   
       22 . The polysilazane perhydride solution according to  claim 21 , wherein the polysilazane perhydride contains no oxygen atoms. 
   
   
       23 . The polysilazane perhydride solution according to  claim 22 , wherein the polysilazane perhydride comprises a repeating unit represented by a formula of —(SiH 2 NH)—. 
   
   
       24 . The polysilazane perhydride solution according to  claim 23 , wherein the dibutyl ether is synthesized through the dehydrocondensation reaction between molecules of butanol. 
   
   
       25 . The polysilazane perhydride solution according to  claim 24 , wherein the solution is coated on the semiconductor substrate having an element isolation trench to form a polysilazane perhydride film, the polysilazane perhydride film being subjected to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, the silicon dioxide film being selectively removed to leave the silicon dioxide film in the element isolation trench, thereby forming an element isolating insulation film. 
   
   
       26 . The polysilazane perhydride solution according to  claim 25 , wherein a concentration of carbon in the silicon dioxide film is 2×10 19  cm −3  or less. 
   
   
       27 . The polysilazane perhydride solution according to  claim 24 , wherein the solution is coated above the semiconductor substrate having an element isolation trench to form a polysilazane perhydride film, the element isolation trench being formed in the semiconductor substrate having the gate insulating film, the first gate electrode film and the stopper film, the polysilazane perhydride film being subjected to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, the silicon dioxide film deposited on the stopper film being selectively removed to leave the silicon dioxide film in the element isolation trench, thereby forming an element isolating insulation film. 
   
   
       28 . The polysilazane perhydride solution according to  claim 27 , wherein a concentration of carbon in the silicon dioxide film is 2×10 19  cm −3  or less.