Semiconductor Devices and Methods for Manufacturing the Same

Abstract

Semiconductor devices and methods for manufacturing the same are disclosed. An example method includes loading a first substrate to be provided with an oxynitride layer along with a second substrate having a nitride layer in a boat, and forming the oxynitride layer on the first substrate by placing the boat into a furnace and thermally treating the boat under an oxygen atmosphere.

1 . A semiconductor device comprising:
 a silicon substrate;   a plurality of active regions in the silicon substrate;   a device isolation region to separate the active regions, wherein the active regions contain boron; the active regions are divided into a first region and a second region; and the first region has a first oxynitride layer and the second region has a second oxynitride layer.   
   
   
       2 . A semiconductor device as defined in  claim 1 , wherein the first oxynitride layer has a thinner thickness than the second oxynitride layer. 
   
   
       3 . A semiconductor device as defined in  claim 1 , wherein the first oxynitride layer has a more homogenous crystalline structure than the second oxynitride layer. 
   
   
       4 . A semiconductor device as defined in  claim 1 , wherein the second oxynitride layer has a concentration of nitrogen which decreases along a depth direction of the second oxynitride layer. 
   
   
       5 . A semiconductor device as defined in  claim 1 , wherein the second oxynitride layer has approximately the same thickness as the first oxide layer. 
   
   
       6 . A semiconductor device as defined in  claim 1 , wherein the first and the second oxynitride layers have no annealed fine crystalline structure. 
   
   
       7 . A semiconductor device as defined in  claim 1 , wherein the first oxynitride layer has a thinner thickness and a more uniform crystalline structure than the second oxynitride layer. 
   
   
       8 . A semiconductor device as defined in  claim 1 , wherein the second oxynitride layer has approximately the same thickness as a first oxide layer from which the second oxynitride layer is formed and the second oxynitride layer has a concentration of nitrogen which decreases along a depth direction of the second oxynitride layer. 
   
   
       9 . A semiconductor device as defined in  claim 1 , wherein the first oxynitride layer has a thinner thickness than the second oxynitride layer and the second oxynitride layer has approximately the same thickness as a first oxide layer from which the second oxynitride layer is formed. 
   
   
       10 . A semiconductor device as defined in  claim 1 , wherein the first oxynitride layer has a uniform crystalline structure and the second oxynitride layer has a concentration of nitrogen which decreases along a depth direction of the second oxynitride layer. 
   
   
       11 . A semiconductor device as defined in  claim 1 , wherein the first oxynitride layer has a thinner thickness and a more uniform crystalline structure than the second oxynitride layer;
 the second oxynitride layer has approximately the same thickness as a first oxide layer from which the second oxynitride layer is formed;   a concentration of nitrogen decreases along a depth direction of the second oxynitride layer; and   the first and the second oxynitride layers have no annealed fine crystalline structure.