Dmos type semiconductor device and method for manufacturing the same

Abstract

A DMOS type semiconductor device and a method for manufacturing the same are provided. An isolation oxide layer with an ion implantation opening is formed on a semiconductor. A gate oxide film is formed on the semiconductor within the ion implantation opening. A gate is formed on the isolation oxide layer and the gate oxide film. A body layer diffusively formed in the semiconductor by implanting ions of an impurity element having a first conduction type from the ion implantation opening. A regulation layer which is shallower than the body layer is diffusively formed in the body layer by implanting ions of an impurity element having a second conduction type opposite to the first conduction type from the ion implantation opening. A source layer is diffusively formed in the regulation layer by implanting ions of an impurity element having the second conduction type from the ion implantation opening. The regulation layer is formed so as to horizontally extend beyond a region in which a gate bird's beak occurs from an end of the gate toward underlying layers of the gate.

1 . A DMOS type semiconductor device, comprising:
 a semiconductor;   an isolation oxide layer, formed on the semiconductor and formed with an ion implantation opening;   a gate oxide film, formed on the semiconductor within the ion implantation opening;   a gate, formed on the isolation oxide layer and the gate oxide film;   a body layer, diffusively formed in the semiconductor by implanting ions of an impurity element having a first conduction type from the ion implantation opening;   a regulation layer, shallower than the body layer and diffusively formed in the body layer by implanting ions of an impurity element having a second conduction type opposite to the first conduction type from the ion implantation opening; and   a source layer, diffusively formed in the regulation layer by implanting ions of an impurity element having the second conduction type from the ion implantation opening,   wherein the regulation layer is formed so as to horizontally extend beyond a region in which a gate bird's beak occurs from an end of the gate toward underlying layers of the gate.   
   
   
       2 . The DMOS type semiconductor device as set forth in  claim 1 , wherein a part of the regulation layer is formed beneath a part of the gate through the gate oxide film. 
   
   
       3 . A method for manufacturing a DMOS type semiconductor device, comprising:
 providing a silicon substrate;   diffusively forming a buried diffusion layer on a main surface of the silicon substrate;   forming an epitaxial growth layer on the silicon substrate and the buried diffusion layer;   forming an isolation oxide layer on the epitaxial growth layer with an ion implantation opening;   forming a gate oxide film on the epitaxial growth layer within the ion implantation opening;   forming a gate on the gate oxide film;   diffusively forming a body layer in the epitaxial growth layer by implanting ions of an impurity element having a first conduction type from the ion implantation opening;   diffusively forming a regulation layer in the body layer by implanting ions of an impurity element having a second conduction type opposite to the first conduction type from the ion implantation opening, the regulation layer being shallower than the body layer; and   diffusively forming a source layer in the regulation layer by implanting ions of an impurity element having the second conduction type from the ion implantation opening,   wherein the regulation layer is formed so as to horizontally extend beyond a region in which a gate bird's beak occurs from an end of the gate toward underlying layers of the gate.   
   
   
       4 . The method as set forth in  claim 3 , wherein the regulation layer is formed by implanting the ions of the impurity element into the body layer using the end of the gate as a self-alignment. 
   
   
       5 . The method as set forth in  claim 4 , wherein the regulation layer is formed by obliquely implanting the ions of the impurity element from the ion implantation opening. 
   
   
       6 . The method as set forth in  claim 3 , wherein a part of the regulation layer is formed beneath a part of the gate through the gate oxide film.