Thermoelectric conversion module and method for manufacturing the same

Abstract

A compact, high-performance thermoelectric conversion module includes a laminate having a plurality of insulating layers, p-type thermoelectric semiconductors and n-type thermoelectric semiconductors formed by a technique for manufacturing a multilayer circuit board, particularly a technique for forming a via-conductor. Pairs of the p-type thermoelectric semiconductors and the n-type thermoelectric semiconductors are electrically connected to each other in series through p-n connection conductors to define thermoelectric conversion element pairs. The thermoelectric conversion element pairs are connected in series through, for example, series wiring conductors. The thermoelectric semiconductors each have a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other. These portions are distributed in the stacking direction of the laminate.

1 . A thermoelectric conversion module comprising:
 a p-type thermoelectric semiconductor;   an n-type thermoelectric semiconductor; and   a laminate including a plurality of insulating layers which are electrically insulative and which are stacked; wherein the laminate has at least one first accommodation hole accommodating the p-type thermoelectric semiconductor, at least one second accommodation hole accommodating the n-type thermoelectric semiconductor, and a p-n connection conductor that electrically connects the p-type and n-type thermoelectric semiconductors to each other in series such that the p-type and n-type thermoelectric semiconductors define a thermoelectric conversion element pair;   the first accommodation hole is defined by a plurality of first perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers;   the second accommodation hole is defined by a plurality of second perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers;   at least one of the p-type and n-type thermoelectric semiconductors includes a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other; and   the portions are distributed in a stacking direction of the laminate.   
   
   
       2 . The thermoelectric conversion module according to  claim 1 , wherein both of the p-type and n-type thermoelectric semiconductors include the portions in which the peak temperatures of thermoelectric figures of merit are different from each other. 
   
   
       3 . The thermoelectric conversion module according to  claim 1 , wherein the laminate includes a plurality of thermoelectric conversion element pairs. 
   
   
       4 . The thermoelectric conversion module according to  claim 3 , wherein the laminate includes a plurality of series wiring conductors arranged to connect the thermoelectric conversion element pairs in series. 
   
   
       5 . The thermoelectric conversion module according to  claim 3 , wherein the laminate includes a plurality of parallel wiring conductors arranged to connect the thermoelectric conversion element pairs in parallel. 
   
   
       6 . A method for manufacturing a thermoelectric conversion module that includes a p-type thermoelectric semiconductor, an n-type thermoelectric semiconductor, and a laminate including a plurality of insulating layers which are electrically insulative and which are stacked, the laminate having at least one first accommodation hole accommodating the p-type thermoelectric semiconductor, at least one second accommodation hole accommodating the n-type thermoelectric semiconductor, and a p-n connection conductor which electrically connects the p-type and n-type thermoelectric semiconductors to each other in series such that the p-type and n-type thermoelectric semiconductors define a thermoelectric conversion element pair, the first accommodation hole being defined by a plurality of first perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers, the second accommodation hole being defined by a plurality of second perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers, the method comprising:
 a step of preparing a plurality of insulating sheets for forming the insulating layers;   a step of preparing a p-type thermoelectric semiconductor material for forming the p-type thermoelectric semiconductor and an n-type thermoelectric semiconductor material for forming the n-type thermoelectric semiconductor;   a step of forming the first and second perforations in the insulating sheets;   a step of packing the p-type thermoelectric semiconductor material and the n-type thermoelectric semiconductor material into the first perforation and the second perforation, respectively;   a step of forming the p-n connection conductor on specific one of the insulating sheets; and   a step of stacking the insulating sheets such that the laminate is obtained.   
   
   
       7 . The thermoelectric conversion module-manufacturing method according to  claim 6 , wherein a step of preparing the p-type thermoelectric semiconductor material and the n-type thermoelectric semiconductor material includes a sub-step of preparing different types of thermoelectric semiconductor components for producing at least one of the p-type and n-type thermoelectric semiconductor materials such that the thermoelectric semiconductor includes a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other, the packing step includes a sub-step of packing the different types of thermoelectric semiconductor components into the perforations of the insulating sheets, and the stacking step includes a sub-step of stacking the insulating sheets having the perforations filled with the different types of thermoelectric semiconductor components such that the insulating sheets are arranged in the laminate in a mixed manner. 
   
   
       8 . The thermoelectric conversion module-manufacturing method according to  claim 6 , further comprising a step of forming series wiring conductors on a specific one of the insulating sheets, wherein the laminate includes the series wiring conductors and a plurality of thermoelectric conversion element pairs connected to each other in series through the series wiring conductors. 
   
   
       9 . The thermoelectric conversion module-manufacturing method according to  claim 6 , further comprising a step of forming parallel wiring conductors on a specific one of the insulating sheets, wherein the laminate includes the parallel wiring conductors and a plurality of thermoelectric conversion element pairs connected to each other in parallel through the parallel wiring conductors. 
   
   
       10 . The thermoelectric conversion module-manufacturing method according to  claim 6 , further comprising a step of firing the laminate, the firing step being subsequent to the stacking step, wherein the insulating sheets are green ceramic sheets.