Rearrangement sheet, semiconductor device and method of manufacturing thereof

Abstract

There are provided a semiconductor device construction having more degrees of design freedom of the semiconductor element than prior arts, and a method of manufacturing such device easily and at low cost. For this purpose, a rearrangement sheet is employed provided with an insulating sheet and conductive metallic patterns formed on this insulating sheet.

1 - 15 . (canceled) 
     
     
         16 : A method of manufacturing a rearrangement sheet comprising:
 a step of providing on an insulating film a plurality of masks corresponding to the shape of conductive metallic patterns in single chip units;   a step of forming a plurality of conductive metal plated patterns in single chip units on said insulating film using said plurality of masks;   a step of removing said masks; and   a step of forming a plurality of insulating sheets provided with conductive metal plated patterns in single chip units, by dividing the insulating film formed with said plurality of conductive metal plated patterns in single chip units, into each single chip unit.   
     
     
         17 : The method of manufacturing a rearrangement sheet according to  claim 16 , further comprising a step of, after the step of removing said masks and before the step of dividing said insulating film, determining an element mounting region in a region on this insulating film other than the region where said conductive metal plated patterns are formed, and forming an insulating adhesive sheet on this element mounting region. 
     
     
         18 : The method of manufacturing a rearrangement sheet according to  claim 16 , wherein said insulating film is an insulating adhesive film. 
     
     
         19 - 20 . (canceled)