Semiconductor Device and Method for Manufacturing the same

Abstract

A semiconductor device consistent with the present invention includes a semiconductor substrate having a semiconductor chip region and a scribe region; a first insulating layer formed in the semiconductor chip region of the semiconductor substrate; a metal contact plug formed in the first insulating layer; a metal sidewall formed on a side of the first insulating layer in the scribe region; a metallization wiring electrically connected with the substrate via the metal contact plug; and a second insulating layer and a protective layer formed over the metal contact plug and the metal sidewall so as to cover the semiconductor chip region and the scribe region.

1 . A semiconductor device, comprising:
 a semiconductor substrate having a semiconductor chip region and a scribe region;   a first insulating layer formed in the semiconductor chip region of the semiconductor substrate;   a metal contact plug formed in the first insulating layer;   a metal sidewall formed on a side of the first insulating layer in the scribe region;   a metallization wiring electrically connected with the substrate via the metal contact plug; and   a second insulating layer and a protective layer formed over the metal contact plug and the metal sidewall so as to cover the semiconductor chip region and the scribe region.   
   
   
       2 . The semiconductor device of  claim 1 , wherein the metal sidewall forms a spacer. 
   
   
       3 - 11 . (canceled) 
   
   
       12 . The semiconductor device of  claim 1 , wherein the metal contact plug is formed after depositing a metal layer. 
   
   
       13 . The semiconductor device of  claim 12 , wherein the metal layer comprises tungsten. 
   
   
       14 . The semiconductor device of  claim 1 , wherein the metallization wiring comprises copper. 
   
   
       15 . The semiconductor device of  claim 12 , wherein the metal sidewall has a spacer form.