Diode for adjusting pin resistance of a semiconductor device

Abstract

A diode comprises a P-type well formed in a semiconductor substrate, at least one N-type impurity doping area formed in the P-type well, an isolation area formed to surround the N-type impurity doping area, a P-type impurity doping area formed to surround the isolation area, first contacts formed in the N-type impurity doping area in a single row or a plurality of rows, and second contacts formed in the P-type impurity doping area in a single row or a plurality of rows, wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.

1 . A diode comprising:
 a P-type well formed in a semiconductor substrate;   at least one N-type impurity doping area formed in the P-type well;   an isolation area formed to surround the N-type impurity doping area;   a P-type impurity doping area formed to surround the isolation area;   first contacts formed in the N-type impurity doping area in a single row or a plurality of rows; and   second contacts formed in the P-type impurity doping area in a single row or a plurality of rows, wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.   
   
   
       2 . The diode according to  claim 1 , wherein the distance between the N-type impurity doping area and the P-type impurity doping area is determined to be at least two times greater than a distance that is defined according to a design rule for a minimum distance between an N-type impurity doping area and a P-type impurity doping area in a corresponding product. 
   
   
       3 . The diode according to  claim 1 , wherein the contact pitch between the first contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       4 . The diode according to  claim 1 , wherein the contact pitch between the second contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       5 . The diode according to  claim 1 , wherein one N-type impurity doping area is formed to be elongate or at least two N-type impurity doping areas are formed to be parallel to one another. 
   
   
       6 . A diode comprising:
 an N-type well formed in a semiconductor substrate;   at least one P-type impurity doping area formed in the N-type well;   an isolation area formed to surround the P-type impurity doping area;   an N-type impurity doping area formed to surround the isolation area;   first contacts formed in the P-type impurity doping area in a single row or a plurality of rows; and   second contacts formed in the N-type impurity doping area in a single row or a plurality of rows,   wherein pin resistance can be adjusted through changing any one of a distance between the P-type impurity doping area and the N-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.   
   
   
       7 . The diode according to  claim 6 , wherein the distance between the P-type impurity doping area and the N-type impurity doping area is determined to be at least two times greater than a distance that is defined according to a design rule for a minimum distance between a P-type impurity doping area and an N-type impurity doping area in a corresponding product. 
   
   
       8 . The diode according to  claim 6 , wherein the contact pitch between the first contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       9 . The diode according to  claim 6 , wherein the contact pitch between the second contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       10 . The diode according to  claim 6 , wherein one P-type impurity doping area is formed to be elongate or at least two P-type impurity doping areas are formed to be parallel to one another. 
   
   
       11 . A diode comprising:
 a P-type well formed in a semiconductor substrate;   at least one N-type impurity doping area formed in the P-type well;   at least one P-type impurity doping area formed in the P-type well to be parallel to the N-type impurity doping area;   at least one isolation area formed between the N-type impurity doping area and the P-type impurity doping area;   first contacts formed in the N-type impurity doping area in a single row or a plurality of rows; and   second contacts formed in the P-type impurity doping area in a single row or a plurality of rows,   wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.   
   
   
       12 . The diode according to  claim 11 , wherein the distance between the N-type impurity doping area and the P-type impurity doping area is determined to be at least two times greater than a distance that is defined according to a design rule for a minimum distance between an N-type impurity doping area and a P-type impurity doping area in a corresponding product. 
   
   
       13 . The diode according to  claim 11 , wherein the contact pitch between the first contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       14 . The diode according to  claim 11 , wherein the contact pitch between the second contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       15 . The diode according to  claim 11 , wherein some of the first contacts or some of the second contacts have the contact pitch at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       16 . A diode comprising:
 an N-type well formed in a semiconductor substrate;   at least one P-type impurity doping area formed in the N-type well;   at least one N-type impurity doping area formed in the N-type well to be parallel to the P-type impurity doping area;   at least one isolation area formed between the P-type impurity doping area and the N-type impurity doping area;   first contacts formed in the P-type impurity doping area in a single row or a plurality of rows; and   second contacts formed in the N-type impurity doping area in a single row or a plurality of rows,   wherein pin resistance can be adjusted through changing any one of a distance between the P-type impurity doping area and the N-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.   
   
   
       17 . The diode according to  claim 16 , wherein the distance between the P-type impurity doping area and the N-type impurity doping area is determined to be at least two times greater than a distance that is defined according to a design rule for a minimum distance between a P-type impurity doing area and an N-type impurity doping area in a corresponding product. 
   
   
       18 . The diode according to  claim 16 , wherein the contact pitch between the first contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       19 . The diode according to  claim 16 , wherein the contact pitch between the second contacts is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       20 . The diode according to  claim 16 , wherein some of the first contacts or some of the second contacts have the contact pitch at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       21 . A diode wherein pin resistance can be adjusted through changing at least one of a distance between an anode and a cathode, a contact pitch of the anode, and a contact pitch of the cathode. 
   
   
       22 . The diode according to  claim 21 , wherein the distance between the anode and the cathode is determined to be at least two times greater than a distance that is defined according to a minimum design rule in a corresponding product. 
   
   
       23 . The diode according to  claim 21 , wherein the contact pitch of the anode is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product. 
   
   
       24 . The diode according to  claim 21 , wherein the contact pitch of the cathode is determined to be at least two times greater than a contact pitch that is defined according to a minimum contact pitch design rule in the corresponding product.