Non-volatile memory devices and methods of forming the same

Abstract

A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced.

1 . A non-volatile memory device comprising:
 a dielectric layer including an oxide layer on a substrate, the dielectric layer including at least two regions therein that each extend across at least a major extent of the dielectric layer and have significantly higher nitrogen concentration relative to other regions of the dielectric layer;   a charge storage layer on the dielectric layer;   a blocking insulating layer on the charge storage layer; and   a gate electrode on the blocking insulating layer.   
   
   
       2 . The non-volatile memory device as recited in  claim 1 , wherein the at least two regions of the dielectric layer includes a first region at an interface region between the oxide layer and the substrate and a second region in the oxide layer. 
   
   
       3 . The non-volatile memory device as recited in  claim 2 , wherein a nitrogen concentration of the first region is different from a nitrogen concentration of the second region. 
   
   
       4 . The non-volatile memory device as recited in  claim 1 , wherein the blocking insulating layer includes at least one insulating layer having a higher dielectric constant than a highest dielectric constant portion of the dielectric layer. 
   
   
       5 . The non-volatile memory device as recited in  claim 4 , wherein the at least one insulating layer of the blocking insulating layer has a higher dielectric constant than a highest dielectric constant of at least a major portion of the dielectric layer. 
   
   
       6 . The non-volatile memory device as recited in  claim 1 , wherein the at least two regions of the dielectric layer have different nitrogen concentrations. 
   
   
       7 . A method of forming a non-volatile memory device, the method comprising:
 forming a dielectric layer including a nitride layer on a substrate;   transforming at least a portion of the nitride layer extending across at least a major lateral extent of the dielectric layer to include added oxygen;   forming a charge storage layer on the dielectric layer;   forming a blocking insulating layer on the charge storage layer; and   forming a gate electrode on the blocking insulating layer.   
   
   
       8 . The method as recited in  claim 7 , wherein the transforming at least a portion of the nitride layer comprises oxidizing the nitride layer. 
   
   
       9 . The method as recited in  claim 8 , wherein the nitride layer is partially oxidized. 
   
   
       10 . The method as recited in  claim 8 , wherein the nitride layer is fully oxidized. 
   
   
       11 . The method as recited in  claim 7 , wherein the blocking insulating layer is formed to include at least one insulating layer having a higher dielectric constant than a highest dielectric constant portion of the dielectric layer. 
   
   
       12 . The method as recited in  claim 11 , wherein the at least one insulating layer of the blocking insulating layer has a higher dielectric constant than a highest dielectric constant of at least a major portion of the dielectric layer. 
   
   
       13 . A method of forming a non-volatile memory device, the method comprising:
 forming a dielectric layer on a substrate;   reacting at least a major portion of free bonds remaining in the dielectric layer to each other;   forming a charge storage layer on the dielectric layer;   forming a blocking insulating layer on the charge storage layer; and   forming a gate electrode on the blocking insulating layer.   
   
   
       14 . The method as recited in  claim 13 , wherein the reacting at least a major portion of the free bonds to each other comprises oxidizing the dielectric layer. 
   
   
       15 . The method as recited in  claim 13 , wherein the blocking insulating layer is formed to include at least one insulating layer having a higher dielectric constant than a highest dielectric constant portion of the dielectric layer. 
   
   
       16 . The method as recited in  claim 15 , wherein the least one insulating layer of the blocking insulating layer has a higher dielectric constant than a highest dielectric constant of at least a major portion of the dielectric layer. 
   
   
       17 . A method of forming a non-volatile memory device, the method comprising:
 forming an oxide layer on a substrate;   forming a nitride layer on the oxide layer;   oxidizing at least a portion of the nitride layer;   forming a charge storage layer on the oxidized nitride layer;   forming a blocking insulating layer on the charge storage layer; and   forming a gate electrode on the blocking insulating layer.   
   
   
       18 . The method as recited in  claim 17 , wherein the nitride layer is partially oxidized. 
   
   
       19 . The method as recited in  claim 17 , wherein the nitride layer is fully oxidized.