Organic light emitting device and method for manufacturing the same

Abstract

Disclosed is an organic light emitting device and a method for manufacturing the same. The organic light emitting device includes a first electrode, one or more organic compound layers, and a second electrode. The first electrode includes a conductive layer and an n-type organic compound layer disposed on the conductive layer. A difference in energy between an LUMO energy level of the n-type organic compound layer of the first electrode and a Fermi energy level of the conductive layer of the first electrode is 4 eV or less. One of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction along with the n-type organic compound layer of the first electrode. A difference in energy between the LUMO energy level of the n-type organic compound layer of the first electrode and an HOMO energy level of the p-type organic compound layer is 1 eV or less. One or more layers interposed between the conductive layer of the first electrode and the second electrode is n-doped with alkali earth metal; an alkali earth metal compound; an alkali metal compound; or La Ce, Pr, Nd, Sm, Eu, Tb, Th, Dy, Ho, Er, Em, Gd, Yb, Lu, Y or Mn, or metal compound containing at least one of the above types of metal.

1 . An organic light emitting device comprising:
 a first electrode;   one or more organic compound layers; and   a second electrode,   wherein the first electrode includes a conductive layer and an n-type organic compound layer disposed on the conductive layer,   a difference in energy between an LUMO energy level of the n-type organic compound layer of the first electrode and a Fermi energy level of the conductive layer of the first electrode is 4 eV or less,   one of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction along with the n-type organic compound layer of the first electrode,   a difference in energy between the LUMO energy level of the n-type organic compound layer of the first electrode and an HOMO energy level of the p-type organic compound layer is 1 eV or less, and   one or more layers interposed between the conductive layer of the first electrode and the second electrode are n-doped with alkali earth metal; an alkali earth metal compound; an alkali metal compound; or La Ce, Pr, Nd, Sm, Eu, Tb, Th, Dy, Ho, Er, Em, Gd, Yb, Lu, Y or Mn, or metal compound containing at least one of the above types of metal.   
   
   
       2 . The organic light emitting device according to  claim 1 , wherein the p-type organic compound layer is a hole injection layer, a hole transport layer, or a light emitting layer. 
   
   
       3 . The organic light emitting device according to  claim 1 , further comprising at least one organic compound layer interposed between the p-type organic compound layer and the second electrode. 
   
   
       4 . The organic light emitting device according to  claim 1 , wherein the n-type organic compound layer of the first electrode is formed of an organic material selected from a group consisting of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), fluoro-substituted 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), cyano-substituted PTCDA, naphthalene-tetracarboxylic-dianhydride (NTCDA), fluoro-substituted NTCDA, cyano-substituted NTCDA, and hexanitrile hexaazatriphenylene (HAT). 
   
   
       5 . The organic light emitting device according to  claim 1 , wherein the conductive layer of the first electrode is formed of a material selected from a group consisting of metal, metal oxide, and conductive polymer. 
   
   
       6 . The organic light emitting device according to  claim 1 , wherein the conductive layer of the first electrode and the second electrode are formed of the same material. 
   
   
       7 . The organic light emitting device according to  claim 1 , wherein at least one of the conductive layer of the first electrode and the second electrode includes a transparent material. 
   
   
       8 . The organic light emitting device according to  claim 1 , wherein the n-type organic compound layer has an LUMO energy ranging from about 4 to 7 eV and electron mobility ranging from about 10 −8  cm 2 /Vs to 1 cm 2 /Vs. 
   
   
       9 . The organic light emitting device according to  claim 1 , wherein the n-doped organic compound layer is an electron injection and/or transport layer. 
   
   
       10 . A stacked organic light emitting device comprising:
 two or more repeating units that each includes a first electrode, one or more organic compound layers, and a second electrode,   wherein the first electrode includes a conductive layer and an n-type organic compound layer disposed on the conductive layer,   a difference in energy between an LUMO energy level of the n-type organic compound layer of the first electrode and a Fermi energy level of the conductive layer of the first electrode is 4 eV or less,   one of the organic compound layers interposed between the n-type organic compound layer of the first electrode and the second electrode is a p-type organic compound layer forming an NP junction along with the n-type organic compound layer of the first electrode,   a difference in energy between the LUMO energy level of the n-type organic compound layer of the first electrode and an HOMO energy level of the p-type organic compound layer is 1 eV or less,   one or more layers interposed between the conductive layer of the first electrode and the second electrode are n-doped with alkali earth metal; an alkali earth metal compound; an alkali metal compound; or La Ce, Pr, Nd, Sm, Eu, Tb, Th, Dy, Ho, Er, Em, Gd, Yb, Lu, Y or Mn, or metal compound containing at least one of the above types of metal, and   the second electrode of one repeating unit is connected to the first electrode of adjacent repeating units connected in series.   
   
   
       11 . The stacked organic light emitting device according to  claim 10 , wherein the conductive layer of the first electrode and the second electrode located at an interface of repeating units connected in series are formed of a single layer. 
   
   
       12 . A method for manufacturing an organic light emitting device, which includes a first electrode, one or more organic compound layers, and a second electrode, comprising:
 forming an n-type organic compound layer on a conductive layer so as to form a first electrode;   forming a p-type organic compound layer on the n-type organic compound layer of the first electrode; and   forming one or more layers of the organic compound layers by n-doping using alkali earth metal; an alkali earth metal compound; an alkali metal compound; or La Ce, Pr, Nd, Sm, Eu, Tb, Th, Dy, Ho, Er, Em, Gd, Yb, Lu, Y or Mn, or metal compound containing at least one of the above types of metal.