Substrate processing method

Abstract

A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

1 . A method of cleaning a processing vessel used for forming an insulation film containing Si and C on a substrate to be processed, by removing said insulation film from an inner wall of said processing vessel, comprising the steps of:
 exciting first plasma of a first processing gas containing oxygen in said processing vessel; and   exciting second plasma of a second processing gas containing fluorine in said processing vessel.   
   
   
       2 . The method as claimed in  claim 1 , wherein said step of exciting said first plasma and said step of exciting said second plasma are conducted repeatedly for plural times. 
   
   
       3 . The method as claimed in  claim 2 , wherein said step of exciting said first plasma and said step of exciting said second plasma are conducted concurrently. 
   
   
       4 . The method as claimed in  claim 1 , wherein said step of exciting said first plasma and said step of exciting said second plasma are conducted by using a parallel-plate plasma processing apparatus or a microwave plasma processing apparatus having a radial line slot antenna. 
   
   
       5 . A substrate processing method, comprising the steps of:
 forming, in a processing vessel, an insulation film containing Si and C on a substrate to be processed; and   cleaning said processing vessel after said step of forming said insulation film,   wherein said step of cleaning said processing vessel comprises:   a first step of exciting plasma of a first processing gas containing oxygen in said processing vessel; and   a second step of exciting plasma of a second processing gas containing fluorine in said processing vessel.   
   
   
       6 . The method as claimed in  claim 5 , wherein said second step is conducted after said first step. 
   
   
       7 . The method as claimed in  claim 5 , wherein said first step and said second step are conducted plural times repeatedly. 
   
   
       8 . The method as claimed in  claim 5 , wherein said first step and said second step are conducted concurrently. 
   
   
       9 . The method as claimed in  claim 5 , wherein said insulation film is formed by a plasma CVD process that uses an organic silane gas. 
   
   
       10 . The method as claimed in  claim 5 , wherein said first step and said second step are conducted by using a parallel-plate plasma processing apparatus or a microwave plasma processing apparatus having a radial line slot antenna.