US2009007932A1PendingUtilityA1

Aqueous composition containing a semiconductor

55
Individually held — no corporate assignee on recordPriority: Dec 21, 2000Filed: Feb 4, 2008Published: Jan 8, 2009
Est. expiryDec 21, 2020(expired)· nominal 20-yr term from priority
Inventors:Karl F. Massholder
C11D 3/0063C11D 7/20C11D 3/1213Y10T428/2982C11D 2111/46
55
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Claims

Abstract

The use of an aqueous composition comprising a semiconductor as cleaning agent for surfaces in the outdoors field and indoors field is proposed.

Claims

exact text as granted — not AI-modified
1 - 13 . (canceled) 
   
   
       14 . An aqueous composition comprising a semiconductor at a concentration of from 5 to 50 mg per 1 liter of aqueous composition. 
   
   
       15 . An aqueous composition according to  claim 14 , wherein the concentration of the semiconductor in the aqueous composition is from 10 to 50 mg per 1 liter of aqueous composition. 
   
   
       16 . An aqueous composition according to  claim 14 , wherein the semiconductor comprises titanium dioxide. 
   
   
       17 . An aqueous composition according to  claim 16 , wherein the titanium dioxide comprises at least 70% by weight of the anatase modification. 
   
   
       18 . An aqueous composition according to  claim 14 , wherein the semiconductor comprises a doped semiconductor. 
   
   
       19 . An aqueous composition according to  claim 18 , wherein the doped semiconductor comprises at least 60 mol % semiconductor ions and less than 40 mol % of one or more doping ions from subgroup 8 of the Periodic Table of the Elements. 
   
   
       20 . An aqueous composition according to  claim 19 , wherein the doped semiconductor is doped with rhodium and/or platinum ions. 
   
   
       21 . An aqueous composition according to  claim 14 , wherein the semiconductor comprises semiconductor particles having a mean particle size, as measured by transmission electron microscopy, of from 10 to 2000 nm. 
   
   
       22 . An aqueous composition according to  claim 21 , wherein the semiconductor particles have a mean particle size of from 20 to 200 nm. 
   
   
       23 . An aqueous composition according to  claim 14 , further comprising one or more auxiliary components selected from the group consisting of adhesion promoters, solubilizers, surface-active substances, dispersants and thickeners. 
   
   
       24 . A method of cleaning a substrate, comprising applying the aqueous composition according to  claim 14  to the substrate and exposing the substrate to light. 
   
   
       25 . A method of cleaning a substrate according to  claim 24 , wherein the step of applying comprises spraying the substrate or applying the aqueous composition to the substrate with a brush, sponge or cloth. 
   
   
       26 . A method of cleaning a substrate according to  claim 24 , wherein the step of applying comprises providing a discontinuous layer of the semiconductor on the substrate. 
   
   
       27 . A method of cleaning a substrate according to  claim 24 , wherein the substrate comprises wood, a concrete slab, natural rock, plastic or masonry. 
   
   
       28 . A method of cleaning a substrate according to  claim 24 , wherein the substrate comprises a building facade, a foot path or a floor covering. 
   
   
       29 . A method of cleaning a substrate according to  claim 24 , wherein the step of exposing the substrate to light comprises exposing the substrate to light having a wavelength in the range from 350 to 400 nm n. 
   
   
       30 . A method of cleaning a substrate according to  claim 24 , wherein the step of exposing the substrate to light comprises exposing the substrate to light having a wavelength in the range from 400 to 650 nm. 
   
   
       31 . A method of cleaning a substrate according to  claim 24 , further comprising removing the aqueous composition from the substrate. 
   
   
       32 . A method of cleaning a substrate according to  claim 24 , further comprising allowing the aqueous composition to dry and removing the resulting dried composition from the substrate. 
   
   
       33 . A method of cleaning a substrate according to  claim 31 , wherein the step of removing comprises washing off the composition with a high-pressure cleaner. 
   
   
       34 . A substrate cleaned by the method of  claim 24 .

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