Semiconductor device including fuse elements and bonding pad

Abstract

A semiconductor device includes a lower-layer substrate, a fuse above the lower-layer substrate and blown by radiation with light, a silicon oxide film on the fuse and on an exposed portion of the surface of the lower-layer substrate, and a silicon nitride film on the silicon oxide film. The portion of the silicon oxide film on the surface of the lower-layer substrate is thicker than the fuse, and the silicon oxide film has an opening opposite the fuse.

1 - 12 . (canceled) 
   
   
       13 . A semiconductor device including fuse elements electrically opened by irradiation with laser light that melts and thereby cuts the fuse elements, the semiconductor device comprising:
 a semiconductor substrate;   a first insulating film supported by said semiconductor substrate and including a pair of via holes;   fuse elements comprising respective portions of an aluminum layer disposed on said first insulating film, one of said fuse elements electrically connecting together metals filling said pair of via holes in said first insulating film, said pair of metals electrically connecting together a respective pair of metal wirings;   a bonding pad comprising a portion of said aluminum layer disposed on said first insulating film;   a second insulating film covering said fuse elements, said first insulating film between said fuse elements, and part of said bonding pad, said second insulating film having a first hole through which at least part of said bonding pad is exposed; and   a third insulating film covering said second insulating film and having a second hole through which at least part of said bonding pad is exposed, wherein
 said third insulating film has planar portions between said fuse elements and ridged portions opposite said fuse elements, and 
 each of said fuse elements is thinner than the total thickness of said planar portions of said third insulating film and said second insulating film at locations between said fuse elements. 
   
   
   
       14 . The semiconductor device according to  claim 13 , wherein said second insulating film is a silicon oxide film. 
   
   
       15 . The semiconductor device according to  claim 14 , wherein said third insulating film is a silicon oxide film.