Fiber Soi Substrate, Semiconductor Device Using Same and Method for Manufacturing Same

Abstract

The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a semiconductor device. There is provided a fiber SOI substrate 5 comprising a fiber 1 with a polygonal cross section, and a semiconductor thin film 3 crystallized after film formation on at least one surface of the fiber 1 , and a plurality of grooves 8 that extend in a linear direction of the fiber 1 and are a ranged at intervals in a width direction are formed on a surface of the fiber 1.

1 : A fiber SOI substrate comprising:
 a fiber having a polygonal cross section; and   a semiconductor thin film crystallized after film formation on at least one surface of the fiber.   
   
   
       2 : The fiber SOI substrate according to  claim 1 , wherein the semiconductor thin film is formed on a plurality of grooves that extend in a linear direction of the fiber on the surface of the fiber and are arranged at intervals in a width direction. 
   
   
       3 : The fiber SOI substrate according to  claim 1 , further comprising a thin film formed of one of an insulating material and a semiconductor, formed between the fiber and the semiconductor thin film. 
   
   
       4 . The fiber SOI substrate according to one of  claims 1  to  3  wherein an insulating film is formed on the semiconductor thin film. 
   
   
       5 : A semiconductor device comprising:
 a fiber SOI substrate comprising a semiconductor thin film crystallized after film formation on a fiber having a polygonal cross section;   a semiconductor active device formed on the semiconductor thin film on at least one surface of the fiber; and   a passive device formed on any surface of the fiber.   
   
   
       6 : The semiconductor device according to  claim 5 , wherein a circuit chip is connected with at least one surface of the fiber. 
   
   
       7 : The semiconductor device according to  claim 5  or  6 , wherein the passive device is at least one of an inductor and a capacitor. 
   
   
       8 : A manufacturing method of a fiber SOI substrate comprising:
 a step of forming an amorphous, micro-crystal, or polycrystal semiconductor thin film on at least one surface of a fiber having a polygonal cross section; and   a step of crystallizing the semiconductor thin film by using one of a thermal annealing and a laser annealing.   
   
   
       9 : The manufacturing method of a fiber SOI substrate according to  claim 8 , comprising a step of forming on the surface of the fiber a plurality of grooves that extend in a linear direction of the fiber and are arranged at intervals in a width direction before forming the semiconductor thin film. 
   
   
       10 : The manufacturing method of the fiber SOI substrate according to  claim 9 , further comprising:
 a step of previously forming a plurality of initial grooves on a surface of a base material that is used to form the fiber; and   a step of forming the fiber by fiber drawing of the base material and, at the same time narrowing the initial grooves of the fiber to have a predetermined width, thereby providing the grooves of the fiber.   
   
   
       11 : The manufacturing method of the fiber SOI substrate according to  claim 10 , comprising a step of forming an insulative or a semiconductor thin film on the surface of the fiber comprising the grooves before crystallizing the semiconductor thin film. 
   
   
       12 : The manufacturing method of the fiber SOI substrate according to  claim 11 , further comprising a step of forming a silicon dioxide film on the semiconductor thin film after crystallizing the semiconductor thin film. 
   
   
       13 : The manufacturing method of the fiber SOI substrate according to  claim 12 , wherein the step of forming the silicon dioxide film is a step of forming a thermally oxidized film in a thermal oxidation furnace, continuously forming a film of a vapor-phase grown silicon dioxide, and annealing the film at a high temperature. 
   
   
       14 . A manufacturing method of a semiconductor device comprising:
 a step of preparing a fiber SOI substrate comprising a semiconductor thin film crystallized after film formation on at least one surface of a fiber having a polygonal cross section;   a step of forming an active device on the semiconductor thin film on at least one surface of the fiber SOI substrate and   a step of forming a passive device on any surface of the fiber.   
   
   
       15 : The manufacturing method of the semiconductor device according to  claim 14 , further comprising a step of circuit chip to at east one surface of the fiber SOI substrate. 
   
   
       16 : A manufacturing method of a semiconductor device, comprising:
 taking up a fiber SOI substrate around a first reel in a state where the fiber SOI substrate comprising a semiconductor thin film on at least one surface of a fiber having a polygonal cross section is covered with a protection film; and   taking up the fiber SOI substrate around a second reel, the fiber SOI substrate being covered with the protection film or a new protection film after processing of manufacturing a semiconductor device on the fiber SOI substrate in a region where the fiber SOI substrate is wound off from the first reel.   
   
   
       17 : The manufacturing method of the semiconductor device according to  claim 16 , wherein the protection film is a resist, and the processing is at least one of a resist peeling, a cleaning, a drying, a film formation, a resist application, a pre-baking, an exposure, a development, and an etching. 
   
   
       18 : A fiber SOI substrate comprising:
 a fiber on which one or a plurality of grooves are formed in a linear direction of the fiber, by a fiber-drawing of a base material on which one or a plurality of grooves are previously formed; and   a semiconductor thin film which is crystallized after film formation on at least one surface of the groove, by using one of a thermal annealing and a laser annealing.   
   
   
       19 : A semiconductor device of the fiber SOI substrate according to  claim 18  comprising:
 a semiconductor active device formed on at least one of the semiconductor thin films of the fiber SOI substrate; and   a semiconductor passive device formed on at least one of the semiconductor thin films.   
   
   
       20 : The semiconductor device of the fiber SOI substrate according to  claim 18 , wherein a circuit chip is connected with at least one surface of the groove. 
   
   
       21 : The fiber SOI substrate according to  claim 18 , wherein a width of the groove which is formed in the base material is approximately 1 mm, and a width of the groove which is formed in the linear direction of the fiber by the fiber-drawing of the base material is approximately 3 μm. 
   
   
       22 : The semiconductor active-passive device of the fiber SOI substrate according to  claim 18 , wherein a plurality of circuits which are active devices are formed on at least one surface of the SOI substrate, and a plurality of circuits and an antenna which are passive devices are formed on the other surface of the SOI substrate. 
   
   
       23 : A manufacturing method of a fiber SOI substrate comprising:
 a step of forming one or a plurality of grooves in a linear direction on a surface of a base material which is used to form the fiber;   a step of forming one or a plurality of grooves in a linear direction of the fiber on a surface of the fiber by a fiber-drawing of the base material a step of forming an amorphous, a micro-crystal, or a polycrystal semiconductor thin film on at least one surface of the grooves, and   a step of crystallizing the semiconductor thin film by using one of a thermal annealing and a laser annealing.   
   
   
       24 : The manufacturing method of the fiber SOI substrate according to  claim 23 , wherein a width of the groove which is formed in the base material is approximately 1 mm, and a width of the groove which is formed in the linear direction of the fiber by the fiber-drawing of the base material is approximately 3 μm.