Semiconductor apparatus and manufacturing method thereof

Abstract

There is provided a manufacturing method of a semiconductor apparatus, including forming an InGaP layer on a substrate, forming a gate electrode having a Ti layer and an Au layer by vapor deposition on an upper surface of the InGaP layer, further forming a GaAs layer on the upper surface of the InGaP layer in a region different from a region in which the gate electrode is formed, and further forming a source electrode and a drain electrode on an upper surface of the GaAs layer. When the gate electrode having the Ti and Au layers is formed on the upper surface of the InGaP layer, the Ti and Au layers are formed with a substrate temperature being set equal to or lower than 180° C.

1 . A manufacturing method of a semiconductor apparatus, comprising:
 forming an InGaP layer on a substrate; and   forming a gate electrode by vapor deposition on an upper surface of the InGaP layer, the gate electrode having a Ti layer and an Au layer.   
   
   
       2 . The manufacturing method as set forth in  claim 1 , wherein
 when the gate electrode having the Ti and Au layers is formed on the upper surface of the InGaP layer, the Ti and Au layers are formed with a substrate temperature being set equal to or lower than 180° C.   
   
   
       3 . The manufacturing method as set forth in  claim 1 , wherein
 a GaAs layer is further formed on the upper surface of the InGaP layer in a region different from a region in which the gate electrode is formed, and   a source electrode and a drain electrode are further formed on an upper surface of the GaAs layer.   
   
   
       4 . The manufacturing method as set forth in  claim 1 , wherein
 SiN having a refractive index in a range from no less than 1.5 to less than 1.9 is produced, and   after the gate electrode having the Ti and Au layers is formed on the upper surface of the InGaP layer, the SiN is deposited on the upper surface of the InGaP layer so as to form an insulating layer.   
   
   
       5 . A semiconductor apparatus manufactured by:
 forming an InGaP layer on a substrate; and   forming a gate electrode by vapor deposition on an upper surface of the InGaP layer, the gate electrode having a Ti layer and an Au layer.   
   
   
       6 . A manufacturing method of a semiconductor apparatus, comprising:
 forming an InGaP layer on a substrate;   forming an electrode on an upper surface of the InGaP layer;   producing SiN; and   depositing the SiN on the upper surface of the InGaP layer so as to form an insulating layer.   
   
   
       7 . The manufacturing method as set forth in  claim 6 , wherein
 the SiN has a refractive index in a range from no less than 1.5 to less than 1.9.   
   
   
       8 . The manufacturing method as set forth in  claim 6 , wherein
 the SiN is produced by using a plasma CVD method with a temperature being set so as to fall within a range from no less than 100° C. to no more than 200° C.   
   
   
       9 . The manufacturing method as set forth in  claim 7 , wherein
 the SiN is produced by using a plasma CVD method with a temperature being set at 150° C.   
   
   
       10 . The manufacturing method as set forth in  claim 9 , wherein
 the SiN is produced by the plasma CVD method with a use of an ammonia gas and a silane gas.   
   
   
       11 . The manufacturing method as set forth in  claim 10 , wherein
 the insulating layer has an oxygen composition ratio of higher than 0.5%.   
   
   
       12 . The manufacturing method as set forth in  claim 10 , wherein
 the insulating layer has a smaller linear thermal expansion coefficient than a film which has an SiN composition ratio of substantially 100%.   
   
   
       13 . A semiconductor apparatus manufactured by:
 forming an InGaP layer on a substrate;   forming an electrode on an upper surface of the InGaP layer;   producing SiN; and   depositing the SiN on the upper surface of the InGaP layer so as to form an insulating layer.   
   
   
       14 . The semiconductor apparatus as set forth in  claim 13 , wherein
 the SiN has a refractive index in a range from no less than 1.5 to less than 1.9.   
   
   
       15 . The semiconductor apparatus as set forth in  claim 13 , wherein
 the SiN is produced by using a plasma CVD method with a temperature being set so as to fall within a range from no less than 100° C. to no more than 200° C.   
   
   
       16 . A manufacturing method of a semiconductor apparatus, comprising:
 forming an InGaP layer on a substrate;   forming a GaAs layer on an upper surface of the InGaP layer;   removing a portion of the GaAs layer which corresponds to a gate formation region by using wet etching; and   forming a gate electrode on a portion of the upper surface of the InGaP layer which becomes exposed by the removal of the portion of the GaAs layer.