Plasma processing apparatus and plasma processing method

Abstract

A plasma processing method for processing a sample mounted on a sample stage in a decompressable processing chamber in which plasma is produced. The method includes detecting a distribution of a concentration of a substance over a surface of a sample in the processing chamber using both of (1) a result of receiving light emission of the plasma and in different directions along the surface of the sample inside the processing chamber, detecting on the respective directions a constituent of the plasma and providing outputs indicative thereof, respectively, and (2) a result of taking in gases in the processing chamber and determining a mass of a constituent of the gases, and adjusting an operation of the processing of the sample so as to adjust a distribution of the processing on the sample surface based on the detected distribution of the concentration of the substance.

1 . A plasma processing method for processing a sample to be processed which is mounted on a sample stage disposed in a decompressable processing chamber, and in which a plasma is produced in the processing chamber, the plasma processing method comprising the steps of:
 detecting a distribution of a concentration of a substance over a surface of a sample in the processing chamber using both of (1) a result of receiving light emission of the plasma and in different directions along the surface of the sample inside the processing chamber, detecting on the respective directions a constituent of the plasma and providing outputs indicative thereof, respectively, and (2) a result of taking in gases in the processing chamber and determining a mass of a constituent of the gases; and   adjusting an operation of the processing of the sample so as to adjust a distribution of the processing on the sample surface based on the detected distribution of the concentration of the substance.   
   
   
       2 . The plasma processing method according to  claim 1 , further comprising the steps of:
 supplying process gases of different compositions into the processing chamber from above the sample stage at positions of two supply holes disposed on a plate at positions of a middle and a circumference of the sample stage; and   adjusting supplying of the gases of different compositions based on the detected distribution.   
   
   
       3 . The plasma processing method according to  claim 1 , further comprising the steps of:
 detecting a distribution of a concentration of a reaction product over the surface of the sample in the processing chamber; and   adjusting the processing of the sample based on the distribution of the concentration of the reaction product.   
   
   
       4 . The plasma processing method according to  claim 1 , further comprising a step of detecting a distribution of a concentration of the substance over the surface of a sample in the processing chamber using both of (1) an output indicative of distribution of a light emitting constituent in the plasma obtained from at least one of light emission spectrometers, and (2) an output indicative of the distribution of constituent of a gas containing a non light-emission substance in the gas obtained from a mass spectrometer. 
   
   
       5 . The plasma processing method according to  claim 1 , wherein at least one of supply of process gas into the processing chamber, temperature of a coolant supplied into the sample stage, a pressure of a heat-transferring gas supplied between the sample and the sample stage, and a power supplied to an electrode provided in the sample stage is adjusted based on the distribution of the concentration of the substance. 
   
   
       6 . The plasma processing method according to  claim 2 , further comprising the steps of:
 detecting a distribution of a concentration of a react ion product over the surface of the sample in the processing chamber; and   adjusting the processing of the sample based on the distribution of the concentration of the reaction product.   
   
   
       7 . The plasma processing method according to  claim 2 , further comprising a step of detecting a distribution of a concentration of the substance over the surface of a sample in the processing chamber using both of (1) an output indicative of distribution of a light emitting constituent in the plasma obtained from at least one of light emission spectrometers, and (2) an output indicative of the distribution of constituent of a gas containing a non light-emission substance in the gas obtained from a mass spectrometer. 
   
   
       8 . The plasma processing method according to  claim 2 , wherein at least one of supply of process gas into the processing chamber, temperature of a coolant supplied into the sample stage, a pressure of a heat-transferring gas supplied between the sample and the sample stage, and a power supplied to an electrode provided in the sample stage is adjusted based on the distribution of the concentration of the substance.