Electrolytic ni plating apparatus and method of manufacturing semiconductor device

Abstract

Aimed at providing an electrolytic Ni plating apparatus capable of suppressing passivation of the surface of a Ni anode, preventing current efficiency and rate of film formation from being degraded, providing a stable Ni plating so as to contribute to improvement in quality, and maintaining a stable production capacity. The electrolytic Ni plating apparatus of the present invention is provided with a nickel (Ni) anode having an average grain size of 10 μm or smaller.

1 . An electrolytic Ni plating apparatus provided with a nickel (Ni) anode having an average grain size of 10 μm or smaller. 
     
     
         2 . The electrolytic Ni plating apparatus as claimed in  claim 1 ,
 wherein said average grain size is 3 μm or smaller.   
     
     
         3 . A Ni anode for electrolytic Ni plating having an average grain size of 10 μm or smaller. 
     
     
         4 . A method of manufacturing a semiconductor device comprising an electrolytic Ni plating process,
 wherein, in said electrolytic Ni plating process, a Ni anode having an average grain size of 10 μm or smaller is used as an anode.   
     
     
         5 . A semiconductor device manufactured using the electrolytic Ni plating apparatus described in  claim 1 .