Electrolytic Device Based on a Solution-Processed Electrolyte

Abstract

The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.

1 - 17 . (canceled) 
   
   
       18 . A method for fabricating a solid electrolyte device comprising:
 providing a solution of a precursor to germanium(IV) sulfide in hydrazine;   wherein said solution is prepared by directly dissolving germanium(IV) sulfide in hvdrazine   wherein the concentration of the precursor is 0.05 to about 1 molar in the hydrazine;
 applying the solution onto a substrate by a process selected from the group consisting of spin coating dip coating, doctor blading, drop casting stamping and printing; 
 and thereafter annealing the precursor to convert the precursor to an amorphous metal chalcogenide layer; wherein the annealing is carried out at a temperature of about 100° C. to about 350° C. and is carried out for about 0.2 hours to about 6 hours: 
 forming a first metallic layer and forming a second-metallic layer; 
 wherein the amorphous metal chalcogenide is between the first and forming a second metallic layers: and wherein the amorphous chalcogenide solid active electrolytic layer comprises a dopant selected from the group cOnsisting of Ag, Cu, Zn, and Li. 
   
   
   
       19 - 31 . (canceled)