Method of fabricating opening and plug

Abstract

A method of fabricating an opening or plug is provided. In the process of forming the opening, before a photoresist layer is formed over a dielectric layer, a treatment process is performed to form a film on the dielectric layer, wherein the film can suppress the outgasing phenomenon of the dielectric layer and prevent the later formed photoresist layer from reacting with the running-off composition component from the dielectric layer. Therefore, the problem of incomplete development due to outgasing of the dielectric layer can be solved. Additionally, in the procedure for forming a plug, before a block layer is forming on a surface of a via, a treatment process is performed to form a film on the surface of the via. Therefore, the problem of having defects inside the block layer caused by outgasing of the dielectric layer can be overcome.

1 . A method of manufacturing a plug, comprising:
 forming a patterned dielectric layer over a first conductive layer, wherein the patterned dielectric layer possesses an opening exposing a portion of the first conductive layer;   performing a treatment process on a surface of the patterned dielectric layer to form a film, wherein the treatment process is an ion implantation process, the film is formed by damaging a portion of the patterned dielectric layer and protects the patterned dielectric layer from running off a plurality of composition components, and dopants used in the ion implantation process comprise boron, boron fluoride, phosphine, arsenic, aluminum, or fluoride;   forming a block layer on a surface of the opening; and   forming a second conductive layer in the opening.   
     
     
         2 . The method of  claim 1 , wherein the thickness of the film is less than 1000 angstroms. 
     
     
         3 . The method of  claim 1 , wherein the dosage of the dopants used in the ion implantation process is of about 10 14 -10 16  atoms/cm 2 . 
     
     
         4 . The method of  claim 1 , wherein the energy for performing the ion implantation process is of about 80-120 KeV. 
     
     
         5 . The method of  claim 1 , wherein the patterned dielectric layer is made of the material with relatively low dielectric constant or fluorine-containing glass. 
     
     
         6 . The method of  claim 1 , wherein the opening is constructed by a via and a trench, and the trench is located over the via.