Apparatus for pulling single crystal by CZ method

Abstract

In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

1 - 38 . (canceled) 
   
   
       39 . A method of pulling a silicon single crystal by use of a Czochralski (CZ) method, wherein size of crystal defects arising in a silicon single crystal to be pulled using the CZ method is miniaturized by means of selecting one or more factors from the group consisting of adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, disposition and adjustment of a cooler, application and adjustment of a magnetic field, and adjustment of doping level of nitrogen. 
   
   
       40 . A method of pulling a silicon single crystal by use of a Czochralski (CZ) method, wherein speeding up of a pulling rate at which a silicon single crystal is to be pulled according to a CZ method and miniaturization of crystal defects are achieved simultaneously, by means of disposing and adjusting a cooler, as well as selecting one or more factors from the group consisting of application and adjustment of a magnetic field, adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, disposition and adjustment of a thermal insulation member, adjustment of a distance between the bottom of the thermal insulation member and a melt surface, and adjustment of doping level of nitrogen. 
   
   
       41 . A silicon ingot for high-speed production of wafers which is produced according to the method as defined in  claim 39  or  claim 40 , and miniaturizes crystal defects. 
   
   
       42 . A wafer for epitaxial growth or annealing purpose which is sliced off from the silicon ingot described in  claim 41 . 
   
   
       43 . A computer-readable storage medium having stored thereon two or more data sets which are selected from the group consisting of adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, disposition and adjustment of a cooler, application and adjustment of a magnetic field, and adjustment of doping level of nitrogen, at the time of pulling a silicon single crystal by use of a Czochralski (CZ) method. 
   
   
       44 . A computer-readable storage medium having stored thereon two or more data sets which are selected, along with data for disposing and adjusting a cooler, from the group consisting of adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, disposition and adjustment of a cooler, application and adjustment of a magnetic field, and adjustment of doping level of nitrogen, at the time of pulling a silicon single crystal by use of a Czochralski (CZ) method. 
   
   
       45 . A program for miniaturizing crystal defects arising in a silicon single crystal is to be pulled according to the CZ method, wherein a computer-readable storage medium has stored thereon one or more programs which are selected from the group consisting of adjustment to a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, adjustment of a cooler, application and adjustment of a magnetic field, and adjustment of doping level of nitrogen. 
   
   
       46 . A program for increasing a pulling rate at which a silicon single crystal is to be pulled according to the CZ method and for miniaturizing crystal defects, wherein a computer-readable storage adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, and adjustment of doping level of nitrogen. 
   
   
       47 . The computer readable storage medium of  claim 43  or  44  wherein said CRSM is stored in a silicon single crystal puller. 
   
   
       48 . The program of  claims 45  or  46  wherein the computer readable storing medium is stored in a silicon single crystal puller.