US2008308877A1PendingUtilityA1
Semiconductor device and method of manufacturing semiconductor device
Est. expiryJan 27, 2025(expired)· nominal 20-yr term from priority
H10P 32/302H10D 64/0132H10D 64/01322H10D 30/0278H10D 30/62H10D 84/0179H10D 84/038
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Claims
Abstract
A semiconductor device includes a semiconductor substrate; a first gate insulation film formed on the semiconductor substrate; a second gate insulation film formed on the semiconductor substrate; a first gate electrode formed on the first gate insulation film and fully silicided; and a second gate electrode formed on the second gate insulation film and fully silicided, a gate length or a gate width of the second gate electrode being larger than that of the first gate electrode, and a thickness of the second gate electrode being smaller than that of the first gate electrode.
Claims
exact text as granted — not AI-modified1 . A semiconductor device comprising:
a semiconductor substrate; a first gate insulation film formed on the semiconductor substrate; a second gate insulation film formed on the semiconductor substrate; a first gate electrode formed on the first gate insulation film and fully silicided; and a second gate electrode formed on the second gate insulation film and fully silicided, a gate length or a gate width of the second gate electrode being larger than that of the first gate electrode, and a thickness of the second gate electrode being smaller than that of the first electrode.
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