Retainer-ring of cmp (chemical mechanical polishing) machine

Abstract

A retainer ring is provided which may restrain the time taken for a break-in polish to a minimum. This retainer ring may be disposed inside of a holding head in a CMP apparatus which polishes a wafer chemically and mechanically; may have a ring shape so as to surround the periphery of the wafer; may press a polish surface of a polish pad; may be made of an engineering plastic material such as PPS; and may have a pressure surface for pressing the polish surface of the polish pad whose surface roughness is a center-line average roughness (Ra) of 0.2 μm or below.

1 . A CMP-apparatus retainer ring which, in a CMP apparatus that includes a polish pad disposed on a base and a holding head holding a wafer and pressing the wafer against the polish pad and that polishes the wafer chemically and mechanically: is provided inside of the holding head; has a ring shape so as to surround the periphery of the wafer; and presses the polish surface of the polish pad, characterized in that:
 a surface roughness of a pressure surface for pressing the polish surface of the polish pad is a center-line average roughness of 0.2 μm or below.   
     
     
         2 . The CMP-apparatus retainer ring of  claim 1 , wherein the ring is comprised of an engineering plastic material. 
     
     
         3 . The CMP-apparatus retainer ring of  claim 2 , wherein the engineering plastic material is polyphenylene sulfide (PPS), polyether etherketone (PEEK), polyethylene terephthalate (PET) or polyacetals (POM) and polyimide (PI).