Method of storing e-fuse data in flash memory device

Abstract

Provided is a method of storing configuration data regarding an operating environment of a flash memory device, which includes a memory cell array having an electrical fuse (E-Fuse) block for storing the configuration data. The method includes storing the configuration data in multiple strings of the E-Fuse block, each string including multiple memory cells configured to store one bit.

1 . A method of storing configuration data regarding an operating environment of a flash memory device, the flash memory device comprising a memory cell array having an electrical fuse (E-Fuse) block for storing the configuration data, the method comprising:
 storing the configuration data in a plurality of strings of the E-Fuse block, each string comprising a plurality of memory cells configured to store one bit.   
   
   
       2 . The method of  claim 1 , wherein the configuration data comprises DC trim information, option information, repair information and bad block information, used for operating the flash memory device. 
   
   
       3 . The method of  claim 1 , wherein each bit value of the configuration data are stored in one memory cell of each corresponding string. 
   
   
       4 . The method of  claim 3 , wherein the configuration data are stored in adjacent memory cells of the plurality of strings connected to one word line. 
   
   
       5 . The method of  claim 1 , wherein each bit value of the configuration data are stored in a plurality of memory cells of each corresponding string. 
   
   
       6 . The method of  claim 5 , wherein the configuration data are stored in adjacent memory cells of the plurality of strings connected to a plurality of word lines. 
   
   
       7 . The method of  claim 6 , wherein the plurality of word lines are adjacent to each other or separated from each other by at least one intervening word line. 
   
   
       8 . The method of  claim 1 , wherein the E-Fuse block comprises:
 a first area which stores the configuration data; and   a second area which does not store the configuration data,   wherein the first area is in a first state or a second state according to a bit value stored therein, and the second area is in the first state.   
   
   
       9 . The method of  claim 8 , wherein the first state is an erase state and the second state is a program state. 
   
   
       10 . The method of  claim 1 , wherein the configuration data are stored in a first word line and a second word line in a zigzag formation. 
   
   
       11 . The method of  claim 10 , wherein the first word line and the second word line are adjacent to each other or separated from each other by at least one intervening word line. 
   
   
       12 . The method of  claim 1 , wherein the configuration data are stored in a first word line group and a second word line group in a zigzag formation, each word line group comprising a plurality of memory cells storing the same bit value. 
   
   
       13 . The method of  claim 12 , wherein the first word line group and the second word line group are adjacent to each other or separated from each other by at least one intervening word line. 
   
   
       14 . The method of  claim 12 , wherein the plurality of memory cells in each word line group are adjacent to each other or separated from each other by at least one intervening memory cell on a corresponding string. 
   
   
       15 . A method of storing configuration data regarding an operating environment of a flash memory device, the flash memory device comprising a memory cell array having an electrical fuse (E-Fuse) block for storing the configuration data, the method comprising:
 storing the configuration data in a plurality of strings of the E-Fuse block, the plurality of strings being separated from each other, each string of the plurality of strings comprising a plurality of memory cells configured to store one bit.   
   
   
       16 . The method of  claim 15 , wherein, when the plurality of strings of the E-Fuse block comprise a first string through an nth string in order of location, the configuration data are stored in the 2k-1th strings, where n and k are natural numbers. 
   
   
       17 . The method of  claim 15 , wherein each bit value of the configuration data are stored in one memory cell of each corresponding string. 
   
   
       18 . The method of  claim 15 , wherein each bit value of the configuration data are stored in a plurality of memory cells of each corresponding string, wherein the configuration data are stored in memory cells connected to a plurality of word lines. 
   
   
       19 . The method of  claim 18 , wherein the word lines are adjacent to each other or separated from each other by at least one intervening word line. 
   
   
       20 . The method of  claim 15 , wherein memory cells of the E-Fuse block that do not store the configuration data are in an erase state.