Nitride optoelectronic devices with backside deposition

Abstract

Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.

1 . A nitride optoelectronic device comprising:
 a substrate;   a first n-type III-N layer overlying a first side of the substrate, the first n-type III-N layer comprising a first group-III element and nitrogen;   a p-type III-N layer overlying the first n-type III-N layer, the p-type III-N layer comprising a second group-III element and nitrogen, wherein the second group-III element is different from the first group-III element; and   a second n-type III-N layer overlying a second side of the substrate opposite the first side of the substrate, the second n-type layer having substantially the same composition as the first n-type III-N layer.   
   
   
       2 . The nitride optoelectronic device recited in  claim 1  wherein the second n-type III-N layer is textured. 
   
   
       3 . The nitride optoelectronic device recited in  claim 1  wherein the second n-type III-N layer comprises a lens having optical power. 
   
   
       4 . The nitride optoelectronic device recited in  claim 1  wherein the substrate is selected from the group consisting of a sapphire substrate, a SiC substrate, a silicon substrate, a spinel substrate, a lithium gallate substrate, and a ZnO substrate. 
   
   
       5 . The nitride optoelectronic device recited in  claim 1  wherein the substrate has a thickness less than 100 μm. 
   
   
       6 . The nitride optoelectronic device recited in  claim 1  wherein the substrate has a thickness less than 25 μm.