Method for Manufacturing Strained Silicon

Abstract

In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.

1 - 5 . (canceled) 
   
   
       6 . A method for manufacturing strained silicon, comprising:
 inducing a curvature in a silicon wafer;   depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature; and   releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.   
   
   
       7 . The method of  claim 6 , wherein the strain is compressive. 
   
   
       8 . The method of  claim 6 , wherein the strain is tensile. 
   
   
       9 . The method of  claim 6 , wherein the strain induced in the epitaxial layer is related to the curvature induced in the silicon wafer by Stoney's Equation. 
   
   
       10 . The method of  claim 6 , wherein inducing a curvature in a silicon wafer comprises bending the silicon wafer between a plenum and a vacuum chuck. 
   
   
       11 . The method of  claim 10 , wherein the plenum has a convex upper surface. 
   
   
       12 . The method of  claim 10 , wherein the plenum has a concave upper surface. 
   
   
       13 . A method for manufacturing strained silicon, comprising:
 inducing a stress into a silicon wafer;   depositing an epitaxial layer of silicon upon an upper surface of the silicon wafer while the silicon wafer is under the induced stress; and   removing the induced stress from the silicon wafer, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.   
   
   
       14 . The method of  claim 13 , wherein the strain is compressive. 
   
   
       15 . The method of  claim 13 , wherein the strain is tensile. 
   
   
       16 . The method of  claim 13 , wherein introducing a stress comprises inducing a curvature in the silicon wafer. 
   
   
       17 . The method of  claim 16 , wherein the strain induced in the epitaxial layer is related to the curvature induced in the silicon wafer by Stoney's Equation. 
   
   
       18 . The method of  claim 16 , wherein the curvature is induced by bending the silicon wafer between a plenum and a vacuum chuck. 
   
   
       19 - 20 . (canceled)