US2008292892A1PendingUtilityA1

Manufacturing method of metal structure in multi-layer substrate and structure thereof

Assignee: PRINCO CORPPriority: May 25, 2007Filed: Dec 5, 2007Published: Nov 27, 2008
Est. expiryMay 25, 2027(~0.8 yrs left)· nominal 20-yr term from priority
Inventors:Chih-Kuang Yang
H05K 3/048Y10T428/24917H05K 3/244H05K 3/107Y10T428/31681H05K 2201/09036Y10T428/31678
53
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Disclosed is a manufacturing method of metal structure in multi-layer substrate and structure thereof. The manufacturing method of the present invention comprises following steps: coating at least one photoresist layer on a surface of a dielectric layer, and then exposing the photoresist dielectric layer to define a predetermined position of the metal structure; therefore, removing the photoresist layer at the predetermined position and forming the metal structure at the predetermined position before forming at least one top-cover metal layer on a surface of the metal structure. The present invention can form a cover metal layer covering over the top surface and the two side surfaces, even the under surface of the metal structure, by one single photomask. Moreover, a finer metal structure with higher reliability can be manufactured. Furthermore, a metal structure can be used as a coaxial structure is also realized.

Claims

exact text as granted — not AI-modified
1 . A manufacturing method of a metal structure in a multi-layer substrate, comprising steps of:
 coating at least one photoresist layer on a surface of a dielectric layer;   exposing the photoresist layer to define a predetermined position of the metal structure;   removing the photoresist layer at the predetermined position;   forming the metal structure at the predetermined position; and   forming at least one top-cover metal layer on a surface of the metal structure.   
   
   
       2 . The manufacturing method of  claim 1 , wherein the top-cover metal layer covers a top surface and two side surfaces of the metal structure. 
   
   
       3 . The manufacturing method of  claim 1 , further comprising a step of forming an under-cover metal layer at the predetermined position before the step of forming the metal structure. 
   
   
       4 . The manufacturing method of  claim 3 , wherein the under-cover metal layer covers an under surface of the metal structure. 
   
   
       5 . The manufacturing method of  claim 3 , further comprising a step of forming an under-cover dielectric layer on the under-cover metal layer after the step of forming under-cover metal layer. 
   
   
       6 . The manufacturing method of  claim 5 , further comprising a step of forming a top-cover dielectric layer on the surface of the metal layer before the step of forming the top-cover metal layer using as a coaxial structure. 
   
   
       7 . The manufacturing method of  claim 6 , wherein the top-cover dielectric layer and the under-cover dielectric layer covers a top surface, two side surfaces and an under surface of the metal structure. 
   
   
       8 . The manufacturing method of  claim 1 , wherein the material of the dielectric layer is polyimide. 
   
   
       9 . The manufacturing method of  claim 1 , wherein the material of the metal structure is copper. 
   
   
       10 . The manufacturing method of  claim 1 , wherein the material of top-cover metal layer is selected from chromium, titanium, gold, platinum and nickel. 
   
   
       11 . The manufacturing method of  claim 1 , further comprising a step of implementing an interface adhesion enhancing process on a surface of the dielectric layer at the predetermined position before the step of forming the metal structure. 
   
   
       12 . The manufacturing method of  claim 1 , further comprising a step of removing a portion of the dielectric layer at the predetermined position after the step of removing the photoresist layer. 
   
   
       13 . The manufacturing method of  claim 12 , further comprising a step of implementing an interface adhesion enhancing process on the surface of the dielectric layer before the step of forming the metal structure. 
   
   
       14 . A manufacturing method of a metal structure in a multi-layer substrate, comprising steps of:
 coating at least one photoresist layer on a surface of a dielectric layer;   exposing the photoresist layer to define a predetermined position of the metal structure;   removing the photoresist layer at the predetermined position;   forming the metal structure at the predetermined position; and   forming at least one top-cover dielectric layer on a surface of the metal structure.   
   
   
       15 . The manufacturing method of  claim 14 , wherein the top-cover dielectric layer covers a top surface and two side surfaces of the metal structure. 
   
   
       16 . The manufacturing method of  claim 14 , further comprising a step of forming an under-cover dielectric layer at the predetermined position before the step of forming the metal structure. 
   
   
       17 . The manufacturing method of  claim 16 , wherein the under-cover dielectric layer covers an under surface of the metal structure. 
   
   
       18 . The manufacturing method of  claim 14 , wherein the top-cover dielectric layer is formed by vacuum coating on the surface of the metal structure. 
   
   
       19 . A metal structure in a multi-layer substrate, comprising:
 a metal structure, positioned at a predetermined position on a dielectric layer; and   a top-cover metal layer, formed on a top surface and two side surfaces of the metal structure.   
   
   
       20 . The metal structure of  claim 19 , further comprising an under-cover metal layer positioned at an under surface of the metal structure. 
   
   
       21 . The metal structure of  claim 20 , further comprising a top-cover dielectric layer and an under-cover dielectric layer formed between the metal structure and the top-cover, under-cover metal layers to be used as a coaxial structure. 
   
   
       22 . The metal structure of  claim 19 , wherein the dielectric layer at the predetermined position sags than the dielectric layer at rest positions. 
   
   
       23 . The metal structure of  claim 19 , an interface adhesion enhancing process is implemented on a surface of the dielectric layer at the predetermined position. 
   
   
       24 . The metal structure of  claim 19 , wherein the material of the dielectric layer is polyimide. 
   
   
       25 . The metal structure of  claim 19 , wherein the material of the metal structure is copper. 
   
   
       26 . The metal structure of  claim 19 , wherein the material of top-cover metal layer is selected from chromium, titanium, gold, platinum and nickel. 
   
   
       27 . A metal structure in a multi-layer substrate, comprising:
 a metal structure, positioned at a predetermined position on a dielectric layer; and   a top-cover dielectric layer, formed on a top surface and two side surfaces of the metal structure.   
   
   
       28 . The metal structure of  claim 27 , further comprising an under-cover dielectric layer positioned at an under surface of the metal structure. 
   
   
       29 . The metal structure of  claim 27 , wherein the top-cover dielectric layer is formed by vacuum coating on the top surface and the two side surfaces of the metal structure.

Join the waitlist — get patent alerts

Track US2008292892A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.