US2008290359A1PendingUtilityA1

Light emitting device and manufacturing method of the same

Assignee: SAMSUNG ELECTRO MECHPriority: Apr 23, 2007Filed: Apr 23, 2008Published: Nov 27, 2008
Est. expiryApr 23, 2027(~0.7 yrs left)· nominal 20-yr term from priority
H10W 72/5363H10W 72/536H10W 72/0198H10H 20/8506H10H 20/01H10H 20/852B29C 39/42
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Claims

Abstract

There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing a light emitting device, the method comprising:
 providing a plurality of light emitting diode chips each having an electrode surface where both electrodes are formed, and a plurality of external terminal blocks, each of the external terminal blocks having an electrical contact part exposed on at least one surface thereof;   attaching the external terminal blocks and the light emitting diode chips on a first sheet such that the electrode surface and an exposed surface of the electrical contact part are located at a top and each of the light emitting diode chips is disposed between the external terminal blocks;   connecting the electrodes of the light emitting diode chip to exposed surfaces of the electrical contact parts of adjacent ones of the external terminal blocks by wires, respectively;   forming a chip array structure by attaching a spacer having a height greater than a height of the wires on the first sheet to surround an arrangement area of the external terminal blocks and the light emitting diode chips;   disposing the chip array structure inside a chamber and decompressing the chamber inside to be in one of a low pressure and vacuum state;   dropping a curable liquid resin to be filled in the arrangement area surrounded by the spacer;   attaching a second sheet on the spacer when the curable liquid resin is filled inside the chip array structure;   curing the curable liquid resin filled inside the chip array structure; and   cutting the chip array structure into a desired size to obtain a plurality of light emitting devices.   
     
     
         2 . A method of manufacturing a light emitting device, the method comprising:
 providing a plurality of light emitting diode chips each having an electrode surface where both electrodes are formed, and a plurality of external terminal blocks, each of the external terminal blocks having an electrical contact part exposed on at least one surface;   attaching the external terminal blocks and the light emitting diode chips on a first sheet such that the electrode surface and an exposed surface of the electrical contact part are located at a top and each of the light emitting diode chips is disposed between the external terminal blocks;   connecting the electrodes of the light emitting diode chip to exposed surfaces of the electrical contact parts of adjacent ones of the external terminal blocks by wires, respectively;   attaching a spacer on the first sheet to surround an arrangement area of the external terminal blocks and the light emitting diode chips, the spacer having a height greater than a height of the wires and having at least one inlet formed therein;   attaching a second sheet on the spacer to produce a chip array structure having an inner space including the arrangement area;   disposing the chip array structure inside a chamber and decompressing the chamber inside to allow the inner space of the chip array structure to be in one of a low pressure and vacuum state;   disposing a curable liquid resin in an area adjacent to the inlet of the spacer to seal the inner space thereof while the chamber is decompressed;   reverting the one of the low pressure and vacuum state of the chamber back to an original state to allow the curable liquid resin to be filled in the inner space of the spacer through the inlet;   curing the curable liquid resin filled inside the chip array structure; and   cutting the chip array structure into a desired size to obtain a plurality of light emitting devices.   
     
     
         3 . The method of  claim 2 , wherein each of the light emitting diode chips comprises a transparent resin layer formed on at least one side surface thereof. 
     
     
         4 . The method of  claim 3 , wherein the each of the light emitting diode chips comprises transparent resin layers formed on the side surface and a surface opposing the electrode surface, respectively. 
     
     
         5 . The method of  claim 4 , wherein a corresponding one of the transparent layers formed on the surface opposing the electrode surface comprises a phosphor powder. 
     
     
         6 . The method of  claim 2 , further comprising removing the first and second sheets, between the curing the curable liquid resin and the cutting the chip array structure into a desired size. 
     
     
         7 . The method of  claim 2 , further comprising forming a phosphor layer on at least the light emitting diode chips out of an exposed surface after the first sheet is removed, between the curing the curable liquid resin and the cutting the chip array structure into a desired size. 
     
     
         8 . The method of  claim 2 , wherein the each of the external terminal blocks comprises an insulating block having first and second surfaces opposing each other,
 the electrical contact part of the external terminal block comprises a conductive via hole extending through the first and second surfaces of the insulating block, and   the exposed surface of the electrical contact part is the first surface of the insulating block.   
     
     
         9 . The method of  claim 8 , wherein the electrical contact part of the external terminal block further comprises an electrode layer formed on the first surface of the insulating block to connect to the conductive via hole. 
     
     
         10 . The method of  claim 8 , wherein the insulating block is one of a ceramic block and a printed circuit board block. 
     
     
         11 . The method of  claim 10 , wherein the ceramic block has a porous structure. 
     
     
         12 . The method of  claim 8 , wherein the cutting the chip array structure comprises cutting the chip array structure together with the external terminal blocks so as to expose the conductive via hole. 
     
     
         13 . The method of  claim 12 , wherein the providing a plurality of light emitting diode chips and a plurality of external terminal blocks comprises arranging the plurality of light emitting diode chips and the plurality of external terminal blocks in such a way that four of the light emitting diode chips share one of the external terminal blocks,
 the cutting the chip array structure comprises cutting the chip array structure together with the external terminal blocks in such a way that the conductive via hole is exposed at two side surfaces of adjacent ones of the insulating blocks, respectively.   
     
     
         14 . The method of  claim 2 , wherein the each of the external terminal blocks has a side surface where at least one step is formed. 
     
     
         15 . The method of  claim 2 , wherein the attaching the external terminal blocks and the light emitting diode chips on a first sheet comprises:
 arranging the light emitting diode chips and the external terminal blocks on the first sheet having a curable material applied thereon; and   curing the curable material such that the light emitting diode chips and the external terminal blocks are secured to each other on the first sheet.   
     
     
         16 . The method of  claim 2 , further comprising disposing the curable liquid resin inside the chamber, before the decompressing the chamber inside,
 whereby the curable liquid resin is de-aired in, the decompressing the chamber inside.   
     
     
         17 . The method of  claim 2 , further comprising unloading the chip array structure outside the chamber, before the curing the curable liquid resin. 
     
     
         18 . The method of  claim 2 , wherein the curable resin comprises an electrically insulating high-reflectivity powder. 
     
     
         19 . The method of  claim 18 , wherein the high-reflectivity powder is a TiO 2  powder. 
     
     
         20 . The method of  claim 2 , further comprising:
 attaching a zenor diode on one of the external terminal block and the light emitting diode chip, after the attaching the external terminal blocks and the light emitting diode chips,   wherein the connecting the electrodes by wires comprises connecting the zenor diode, the electrical contact part of the external terminal block and the electrodes of the light emitting diode chip to one another by wires.   
     
     
         21 . The method of  claim 2 , further comprising attaching a heat radiator on the light emitting diode chip, after attaching the external terminal blocks and the light emitting diode chips. 
     
     
         22 . The method of  claim 2 , wherein the second sheet is rigid. 
     
     
         23 . The method of  claim 2 , wherein the external terminal block has a height identical to a height of the spacer,
 the external terminal block has a step formed on a surface facing the light emitting diode chip.   
     
     
         24 . The method of  claim 23 , wherein the external terminal block is formed of a conductor capable of serving as the electrical contact part. 
     
     
         25 . The method of  claim 23 , wherein the producing the chip array structure comprises attaching the second sheet on a top of the spacer and the top end of the external terminal block. 
     
     
         26 . A light emitting device manufactured according to a method defined in  claim 2 . 
     
     
         27 . A light emitting device comprising:
 a package body having a first circumferential surface, a second circumferential surface and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively, and formed of a curable resin;   first and second external terminal blocks disposed at both edges of the package body, respectively, each of the first and second external terminal blocks having a first surface exposed to the first circumferential surface of the package body, a second surface opposing the first surface and side surfaces disposed therebetween, and having an electrical contact part extended from inside of the package body to an exposed portion of the first surface;   a light emitting diode chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed, the electrode surface facing the second level area; and   wires electrically connected to first and second electrodes of the light emitting diode chip to the electrical contact parts of the first and second external terminal blocks, respectively.   
     
     
         28 . The light emitting device of  claim 27 , wherein the light emitting diode chip comprises a plurality of light emitting diode chips, and each of the light emitting diode chips comprises a transparent resin layer formed on at least a side surface thereof, respectively. 
     
     
         29 . The light emitting device of  claim 28 , wherein the each of the light emitting diode chips comprises transparent resin layers formed on the side surface and a surface opposing the electrode surface. 
     
     
         30 . The light emitting device of  claim 29 , wherein a corresponding one of the transparent layers formed on the surface opposing the electrode surface comprises a phosphor powder. 
     
     
         31 . The light emitting device of  claim 27 , further comprising a phosphor layer formed on at least an area of the light emitting diode chip out of the first circumferential surface of the package body. 
     
     
         32 . The light emitting device of  claim 31 , wherein the curable resin of the package body has a refractivity of 1.5 or less. 
     
     
         33 . The light emitting device of  claim 31 , further comprising side reflective layers formed on two opposing ones of the side surfaces to cover the area of the light emitting diode chip, the side reflective layers formed of a resin containing a high-reflectivity powder. 
     
     
         34 . The light emitting device of  claim 27 , wherein the each of the first and second external terminal blocks has the second surface located inside the package body and the side surfaces partially exposed to the package body, and
 the electrical contact part is formed to connect from the second surfaces of the first and second external terminal blocks to exposed portions of the side surfaces, respectively.   
     
     
         35 . The light emitting device of  claim 34 , wherein the each of the first and second external terminal blocks comprises an insulating block having a first surface exposed to the second circumferential surface of the package body and a second surface facing the second level area, and a side surface disposed therebetween, and
 each of the electrical contact parts of the first and second external terminal blocks comprises a conductive via hole extending through the first and second surfaces of the insulating block and exposed at the exposed portions of the side surfaces.   
     
     
         36 . The light emitting device of  claim 35 , wherein two adjacent ones of the side surfaces of the first and second external terminal blocks are exposed to two adjacent ones of the package body, respectively. 
     
     
         37 . The light emitting device of  claim 35 , wherein three adjacent ones of the first and second external terminal blocks are exposed to three adjacent ones of the package body, respectively. 
     
     
         38 . The light emitting device of  claim 35 , wherein the electrical contact part of the each of the first and second external terminal blocks further comprises an electrode layer formed on the second surface of the insulating block to connect to the conductive via hole. 
     
     
         39 . The light emitting device of  claim 35 , wherein the each of the first and second external terminal blocks further comprises:
 a metal layer formed on the first surface of the insulating block to connect to the conductive via hole; and   a light absorption prevention layer formed on the first surface of the insulating block to cover the metal layer and formed of a resin containing a high-reflectivity powder.   
     
     
         40 . The light emitting device of  claim 35 , wherein the insulating block is one of a ceramic block and a printed circuit board block. 
     
     
         41 . The light emitting device of  claim 40 , wherein the ceramic block has a porous structure. 
     
     
         42 . The light emitting device of  claim 41 , wherein the porous structure has a porosity of 10 to 60% and a pore diameter of 0.1 to 1.3 μm. 
     
     
         43 . The light emitting device of  claim 27 , wherein the each of the first and second external terminal blocks has a step formed on a surface facing the light emitting diode chip and has the second surface exposed to the second circumferential surface of the package body, and
 the electrical contact part is formed to connect from the step of the each of the first and second external terminal blocks to the exposed second surface.   
     
     
         44 . The light emitting device of  claim 43 , wherein the first and second external terminal blocks are formed of an electrically conductive material capable of serving as the electrical contact part. 
     
     
         45 . The light emitting device of  claim 27 , wherein the curable resin comprises an electrically insulating high-reflectivity powder. 
     
     
         46 . The light emitting device of  claim 45 , wherein the high-reflectivity powder comprises a TiO 2  powder. 
     
     
         47 . The light emitting device of  claim 27 , further comprising a zenor diode disposed in the second level area, the zenor diode attached on one of the first surface of the each of the first and second external terminal blocks and the electrode surface of the light emitting diode chip to electrically connect to the electrical contact part and one of the first and second electrodes. 
     
     
         48 . The light emitting device of  claim 27 , further comprising a heat radiator disposed in the second level area and attached on the light emitting diode chip. 
     
     
         49 . The light emitting device of  claim 27 , wherein the first and second circumferential surfaces and side surfaces of the package body are planar.

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