US2008289764A1PendingUtilityA1

End point detection electrode system and etch station

Assignee: IBMPriority: May 25, 2007Filed: May 25, 2007Published: Nov 27, 2008
Est. expiryMay 25, 2027(~0.8 yrs left)· nominal 20-yr term from priority
H10P 72/0426H10P 72/0604
40
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Claims

Abstract

An end point detection electrode system and an etch station including the electrode system are disclosed. In one embodiment, the electrode system includes: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode.

Claims

exact text as granted — not AI-modified
1 . An end point detection electrode system comprising:
 an insulative mount;   a first Mu-metal electrode coupled to the insulative mount; and   a second Mu-metal electrode coupled to the insulative mount, the second Mu-metal electrode surrounding the first Mu-metal electrode.   
   
   
       2 . The system of  claim 1 , wherein the insulative mount includes polyvinyl chloride (PVC). 
   
   
       3 . The system of  claim 1 , wherein the first Mu-metal electrode is substantially circular, and the second Mu-metal electrode is substantially O-shaped. 
   
   
       4 . The system of  claim 3 , wherein the first Mu-metal electrode has a diameter of approximately 1.8 inches to approximately 2.2 inches, and the second Mu-metal electrode has an inner diameter of approximately 3.8 inches to approximately 4.2 inches and an outer diameter of approximately 4.8 inches to approximately 5.2 inches. 
   
   
       5 . The system of  claim 1 , wherein the first and second Mu-metal electrodes are substantially coaxial. 
   
   
       6 . An etch station comprising:
 a wet etchant bath;   an end point detection electrode system including:
 an insulative mount, a first Mu-metal electrode coupled to the insulative mount, and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode; and 
   means for monitoring an electrical characteristic between the first Mu-metal electrode and the second Mu-metal electrode and controlling the etching process based on the monitoring.

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