US2008285195A1PendingUtilityA1
Integrated circuit with protection against electrostatic damage
Est. expiryApr 28, 2019(expired)· nominal 20-yr term from priority
H10D 89/711H10D 89/611H10D 89/811
51
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Claims
Abstract
An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from electrostatic damage. A high-frequency section of the IC is provided with a protection circuit including diode-connected transistors connected by multiple stages. In addition, there are applied the transistors in which elements thereof are isolated by insulator that can prevent thyristor operation.
Claims
exact text as granted — not AI-modified1 . A semiconductor integrated circuit having a plurality of input and output terminals, comprising at least two or more kinds of protection circuits against electrostatic discharge having electrical characteristics.
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