Semiconductor device and method for fabricating the same

Abstract

The semiconductor device comprises a silicon wafer 10 , a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10 , and a silicon nitride film 16 b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.

1 . A semiconductor device comprising:
 a substrate of a semiconductor;   a gate electrode formed on one surface of the substrate with a gate insulation film formed therebetween;   a source/drain region formed in the substrate on both sides of the gate electrode;   a contact plug electrically connected to the substrate;   a first insulation film formed on said one surface of the substrate;   a multilayer interconnection buried in the first insulation film; and   a second insulation film formed on the other surface of the substrate and having a stress relaxing a stress exerted by the first insulation film to the substrate.   
     
     
         2 . A semiconductor device according to  claim 1 , wherein
 the second insulation film has a stress equal to a stress of the first insulation film.   
     
     
         3 . A semiconductor device according to  claim 1 , wherein
 the second insulation film has a tensile stress.   
     
     
         4 . A semiconductor device according to  claim 1 , wherein
 the second insulation film is a silicon nitride film.   
     
     
         5 . A semiconductor device according to  claim 1 , wherein
 the multilayer interconnection includes 10 or more interconnection layers.   
     
     
         6 . A semiconductor device according to  claim 1 , wherein
 the substrate is a wafer of an above 200 mm-diameter including 200 mm.   
     
     
         7 . A semiconductor device according to  claim 1 , wherein
 the first insulation film includes a silicon nitride film or a low dielectric constant insulation film.   
     
     
         8 . A semiconductor device according to  claim 1 , wherein
 the first insulation film includes a stopper film which has a tensile stress and functions as a stopper for etching or polishing.