Side-emission type semiconductor light-emitting device and manufacturing method thereof

Abstract

A side-emission type semiconductor light-emitting device 10 includes a substrate 12 , and the substrate 12 is provided with a case 14 formed of a resin having opacity and reflectivity. The substrate 12 is formed, on its surface, with electrodes 18 a and 18 b onto which an LED chip 20 is bonded. A transparent or translucent resin 16 is charged between the substrate 12 and the case 14 whereby the LED chip 20 is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device 10 includes surfaces 16 a, 16 b and a surface opposite to the surface 16 b which are formed of the transparent or translucent resin 16 . Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case 14 is scattered by the light-emitting surface.

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       10 . A side-emission semiconductor light-emitting device, comprising:
 a substrate formed with an electrode; and   an LED chip which is bonded onto said electrode by a bonding paste, wherein said LED chip has a transparent or translucent base and a light-emitting layer formed thereon, and is mounted on a position deviated from an application position of said bonding paste to a light emitting surface side.   
   
   
       11 . A side-emission semiconductor light-emitting device according to  claim 10 , wherein said electrode includes an application area having a center deviated from a mounted position of said LED chip to an opposite direction of said light-emitting surface. 
   
   
       12 . A side-emission semiconductor light-emitting device according to  claim 11 , wherein said electrode further includes an auxiliary area formed closer to said light-emitting surface side than said application area and a narrow connecting portion connecting said application area and said auxiliary area. 
   
   
       13 . A side-emission type semiconductor light-emitting device according to  claim 11 , wherein a center of said application area is deviated from a center of said substrate to said opposite direction. 
   
   
       14 . A side-emission type semiconductor light-emitting device according to  claim 12 , wherein a center of said application area is deviated from a center of said substrate to said opposite direction.