Method and system for forming thin films

Abstract

An object of the present invention is to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film 22 is produced on an inner wall surface 20 b of a substrate 20 facing a space 23 formed in the substrate 20 . The substrate 20 is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space 23 and a pulse voltage is applied on the substrate 20 without substantially applying a direct bias voltage on the substrate 20 to form the thin film on the inner wall surface 20 b.

1 . A system for producing a thin film by plasma CVD on an inner wall surface of a substrate facing a space formed in said substrate, said substrate having an inner wall, said system comprising:
 a chamber for plasma CVD and for containing said substrate;   a supply hole for supplying a gas for plasma reaction into said inner wall surface of said chamber; and   a high voltage pulse source for applying a pulse voltage on said substrate,   wherein said gas is flown into said space and said high voltage pulse source applies a pulse voltage on said substrate without substantially applying a DC bias voltage on said substrate to form said thin film on said inner wall surface, said high voltage pulse source applies an electric field in a range of 20 to 300 kV/m, the inner wall faces an inner space of said substrate, and the inner space has a diameter of 0.9 mm or smaller.   
   
   
       2 . The system of  claim 1 , further comprising a means for generating a difference of a pressure in the longitudinal direction of said substrate. 
   
   
       3 . The system of  claim 1 , wherein said substrate has one opening therein communicating with said space. 
   
   
       4 . The system of  claim 1 , wherein said thin film comprises diamond or diamond like carbon.