Induced electrical property changes in single walled carbon nanotubes by electromagnetic radiation

Abstract

In the apparatus and process of the present invention, it is possible to fabricate CNTs with specific diameters and morphologies. The morphology selection can yield samples of pre-selected diameter configurations making it possible to take a sample of SWNTs produced by any synthesis technique and induce a morphology change that causes the sample to be either all conductive, all narrow band gap semiconductive or wide band gap semiconductive, within a given nanotube rope.

1 - 2 . (canceled) 
     
     
         3 . A process for selectively changing the diameter and morphology of a carbon nanotube, comprising:
 placing a carbon nanotube in a vacuum area;   creating a vacuum in the vacuum area; and   directing a microwave at a selected frequency and power setting at the carbon nanotube.   
     
     
         4 . The process of  claim 3 , further comprising being adapted for fabricating carbon nanotube semiconducting devices. 
     
     
         5 . The process of  claim 3 , wherein the vacuum is at a pressure of about 10 −4  to 10 −9  torr. 
     
     
         6 . The process of  claim 3 , wherein the vacuum is at a pressure of about 10 −5  torr. 
     
     
         7 . The process of  claim 3 , wherein the microwave has a field of about 1.01×10 −5  eV. 
     
     
         8 . The process of  claim 3 , wherein the microwave emits microwave radiation with a frequency of between 0.1 GHz and 100 GHz with a power output of between 0.001 Watt and 1,500 Watts. 
     
     
         9 . The process of claim  23 , wherein the microwave emits microwave radiation with a frequency of about 2.45 GHz at about 400 Watts. 
     
     
         10 . The carbon nanotube produced by the method of  claim 3 . 
     
     
         11 . A process for selectively changing the diameter and morphology of a carbon nanotube, comprising:
 placing a carbon nanotube in a vacuum area;   creating a vacuum with a pressure of about  10   −4  to 10 −9  torr in the vacuum area; and   directing a microwave frequency of between 0.1 GHz and 100 GHz and a power output of between 0.001 Watt and 1,500 Watts at the carbon nanotube.   
     
     
         12 . The carbon nanotube produced by the method of  claim 11 .