Semiconductor Device

Abstract

A semiconductor device having a semiconductor substrate, an interlayer insulating layer formed on the substrate and having a contact hole partially exposing the substrate, and a diffusion barrier formed on the interlayer insulating layer and in the contact hole. The diffusion barrier comprises a plurality of TaSiN thin films. The present invention advantageously provides a semiconductor device with enhanced step coverage and reduced resistivity of a TaSiN layer.

1 . A semiconductor device comprising:
 a semiconductor substrate;   an interlayer insulating layer formed on the substrate and having a contact hole partially exposing the substrate; and   a diffusion barrier formed on the interlayer insulating layer and in the contact hole, comprising a plurality of TaSiN thin films.   
   
   
       2 . The semiconductor device of  claim 1 , wherein the TaSiN thin films comprise a reaction product of a silicon source gas and an impurity-removed TaN thin film. 
   
   
       3 . The semiconductor device of  claim 1 , wherein the diffusion barrier comprises an ALD layer. 
   
   
       4 . The semiconductor device of  claim 2 , wherein the impurity-removed TaN thin film comprises a TaN thin film processed by a plasma comprising a mixture of a hydrogen containing gas and a noble gas. 
   
   
       5 . The semiconductor device of  claim 4 , wherein the TaN thin film has a thickness of from 2 to 100 Å. 
   
   
       6 . The semiconductor device of  claim 4 , wherein the hydrogen containing gas comprises a member selected from the group consisting of H 2 , H 2 +N 2  and NH 3 . 
   
   
       7 . The semiconductor device of  claim 2 , wherein the silicon source gas comprises a silane. 
   
   
       8 . The semiconductor device of  claim 2 , wherein the silicon source gas comprises SiH 4 .